Now showing items 1-13 of 13

    • Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength 

      Bütün, S.; Tut, T.; Bütün, B.; Gökkavas, M.; Yu, H.; Özbay, Ekmel (AIP Publishing LLC, 2006-03-21)
      Deep ultraviolet Al0.75Ga0.25N metal-semiconductor-metal photodetectors with high Al concentration have been demonstrated. A metal-organic chemical vapor deposition grown high quality Al0.75Ga0.25N layer was used as a ...
    • Dual-color ultraviolet metal-semiconductor-metal AlGaN photodetectors 

      Gökkavas, M.; Bütün, S.; Yu, H.; Tut, T.; Bütün, B.; Özbay, Ekmel (AIP Publishing LLC, 2006)
      Backilluminated ultraviolet metal-semiconductor-metal photodetectors with different spectral responsivity bands were demonstrated on a single Alx Ga1-x N heterostructure. This was accomplished by the incorporation of an ...
    • Experimental evaluation of impact ionization coefficients in Al xGa1-xN based avalanche photodiodes 

      Tut, T.; Gökkavas, M.; Bütün, B.; Bütün, S.; Ülker, E.; Özbay, Ekmel (AIP Publishing LLC, 2006)
      The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization ...
    • Fabrication and characterisation of solar-blind Al0.6Ga0.4N MSM photodetectors 

      Bıyıklı, Necmi; Kimukin, I.; Tut, T.; Aytur, O.; Özbay, Ekmel (The Institution of Engineering and Technology, 2005)
      Solar-blind metal-semiconductor-metal (MSM) photodiodes based on MOCVD-grown Al0.6Ga0.4N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. ...
    • High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current 

      Tut, T.; Bıyıklı, Necmi; Kimukin, I.; Kartaloglu, T.; Aytur, O.; Unlu, M. S.; Özbay, Ekmel (Pergamon Press, 2005-01)
      Al0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized ...
    • High performance AlxGa1-xN-based avalanche photodiodes 

      Tut, T.; Butun, B.; Gokkavas, M.; Özbay, Ekmel (Elsevier BV, 2007-10)
      We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 820 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. We improved the ...
    • High-performance solar-blind photodetectors based on AlxGa 1_xN heterostructures 

      Özbay, Ekmel; Bıyıklı, Necmi; Kimukin, I.; Kartaloglu, T.; Tut, T.; Aytür, O. (IEEE, 2004)
      Design, fabrication, and characterization of high-performance AI xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky. p-i-n, and metal-semicondnctor-metal ...
    • High-performance visible-blind GaN-based p-i-n photodetectors 

      Butun, B.; Tut, T.; Ulker, E.; Yelboga, T.; Özbay, Ekmel (AIP Publishing LLC, 2008)
      We report high performance visible-blind GaN-based p-i-n photodetectors grown by metal-organic chemical vapor deposition on c -plane sapphire substrates. The dark current of the 200 μm diameter devices was measured to be ...
    • High-speed characterization of solar-blind AlxGa 1-xN p-i-n photodiodes 

      Bıyıklı, Necmi; Kimukin, I.; Tut, T.; Kartaloglu, T.; Aytur, O.; Özbay, Ekmel (Institute of Physics, 2004)
      We report on the temporal pulse response measurements of solar-blind AlxGa1-xN-based heterojunction p-i-n photodiodes. High-speed characterization of the fabricated photodiodes was carried out at 267 nm. The bandwidth ...
    • Photonic band gaps, defect characteristics, and waveguiding in two-dimensional disordered dielectric and metallic photonic crystals 

      Bayındır, Mehmet; Cubukcu, E.; Bulu, I.; Tut, T.; Özbay, Ekmel; Soukoulis, C. M. (American Physical Society, 2001)
      We experimentally investigated the influence of positional disorder on the photonic band gap, defect characteristics, and waveguiding in two-dimensional dielectric and metallic photonic crystals. Transmission measurements ...
    • Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity 

      Tut, T.; Yelboga, T.; Ulker, E.; Özbay, Ekmel (AIP Publishing LLC, 2008)
      We report on the high performance solar-blind AlGaN-based p-i-n photodetectors that are grown by metal-organic chemical vapor deposition on c -plane sapphire substrates. The dark current of the 200 μm diameter devices was ...
    • Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity 

      Bıyıklı, Necmi; Aytur, O.; Kimukin, I.; Tut, T.; Özbay, Ekmel (American Institute of Physics, 2002)
      We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n-/n+ AlGaN/GaN heterostructures using a microwave compatible ...
    • Solar-blind AlxGa1-xN-based avalanche photodiodes 

      Tut, T.; Butun, S.; Butun, B.; Gokkavas, M.; Yu, H. B.; Özbay, Ekmel (American Institute of Physics, 2005)
      We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1-xN/GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible ...