Now showing items 1-20 of 30

    • Atomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectors 

      Salihoğlu, Ömer; Muti, Abdullah; Kutluer, Kutlu; Tansel, T.; Turan, R.; Kocabaş, Coşkun; Aydınlı, Atilla (AIP, 2012)
      Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al 2O 3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single ...
    • Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films 

      Genisel, M. F.; Uddin, M. N.; Say, Z.; Kulakci, M.; Turan, R.; Gulseren, O.; Bengu, E. (2011)
      In this study, we implanted Nþ and Nþ 2 ions into sputter deposited amorphous boron carbide (a-BC) and diamond like carbon (DLC) thin films in an effort to understand the chemical bonding involved and investigate possible ...
    • Charge retention in quantized energy levels of nanocrystals 

      Dâna, A.; Akça, I.; Ergun, O.; Aydınlı, Atilla; Turan, R.; Finstad, T. G. (Elsevier B.V., 2007)
      Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon ...
    • Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories 

      Akça, İmran B.; Dâna, Aykutlu; Aydınlı, Atilla; Turan, R. (AIP Publishing, 2008-02)
      Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents ...
    • Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Salihoglu, Ö.; Aydınlı, Atilla; Aslan, B.; Arikan, B.; Kilinc, M. C.; Ergun, Y.; Serincan, U.; Turan, R. (IEEE, 2012)
      The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ...
    • Electronic and optical properties of 4.2 lm‘‘N’’ structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydınlı, Atilla (Elsevier B.V., 2013-01-05)
      We report on the development of a new structure for type II superlattice photodiodes that we call the ‘‘N’’ design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The ...
    • Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydınlı, Atilla (Elsevier, 2013)
      We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ...
    • A figure of merit for optimization of nanocrystal flash memory design 

      Dâna, A.; Akca, I.; Aydınlı, Atilla; Turan, R.; Finstad, T. G. (2008)
      Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanocrystal flash memory depends critically on the choice of nanocrystal size and density as well as on the choice of tunnel ...
    • Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence 

      Yerli, S.; Serincan, U.; Dogan, I.; Tokay, S.; Genisel, M.; Aydınlı, Atilla; Turan, R. (AIP Publishing, 2006)
      Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray ...
    • High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers 

      Ergun, Y.; Hostut, M.; Tansel, T.; Muti, bdullah; Kilic, A.; Turan, R.; Aydınlı, Atilla (SPIE, 2013)
      We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ...
    • In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon 

      Tokel, O.; Turnalı, A.; Makey, G.; Elahi, P.; Çolakoǧlu, T.; Ergeçen E.; Yavuz, Ö.; Hübner R.; Borra, M. Z.; Pavlov, I.; Bek, A.; Turan, R.; Kesim, D. K.; Tozburun, S.; Ilday, S.; Ilday, F. Ö. (Nature Publishing Group, 2017)
      Silicon is an excellent material for microelectronics and integrated photonics 1-3, with untapped potential for mid-infrared optics 4 . Despite broad recognition of the importance of the third dimension 5,6, current ...
    • Indium rich InGaN solar cells grown by MOCVD 

      Çakmak, H.; Arslan, E.; Rudziński, M.; Demirel, P.; Unalan, H. E.; Strupiński, W.; Turan, R.; Öztürk, M.; Özbay, Ekmel (Springer New York LLC, 2014)
      This study focuses on both epitaxial growths of InxGa 1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The ...
    • Laser-slicing of silicon with 3D nonlinear laser lithography 

      Tokel, Onur; Turnalı, Ahmet; Çolakoğlu, T.; İlday, Serim; Borra, M. Z.; Pavlov, Ihor; Bek, A.; Turan, R.; İlday, Fatih Ömer (OSA, 2017)
      Recently, we have showed a direct laser writing method that exploits nonlinear interactions to form subsurface modifications in silicon. Here, we use the technique to demonstrate laser-slicing of silicon and its applications.
    • Light harvesting with Ge quantum dots embedded in SiO2 or Si3N4 

      Cosentino, S.; Ozen, E. S.; Raciti, R.; Mio, A. M.; Nicotra, G.; Simone, F.; Crupi, I.; Turan, R.; Terrasi, A.; Aydınlı, Atilla; Mirabella, S. (A I P Publishing LLC, 2014)
      Germanium quantum dots (QDs) embedded in SiO2or in Si3N4have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850°C to ...
    • Low dark current N structure superlattice MWIR photodetectors 

      Salihoğlu, O.; Muti, Abdullah; Turan, R.; Ergun, Y.; Aydınlı, Atilla (SPIE, 2014)
      Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R0A) which is directly related to dark current of the detector. Dark current arises ...
    • Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared 

      Tansel, T.; Kutluer, K.; Muti, Abdullah; Salihoğlu, Ömer; Aydınlı, Atilla; Turan, R. (SPIE, 2013)
      We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise ...
    • Matrix density effect on morphology of germanium nanocrystals embedded in silicon dioxide thin films 

      Alagoz, A. S.; Genisel, M. F.; Foss, Steinar; Finstad, T. G.; Turan, R. (Materials Research Society, 2011)
      Flash type electronic memories are the preferred format in code storage at complex programs running on fast processors and larger media files in portable electronics due to fast write/read operations, long rewrite life, ...
    • Multiscale self-asssembly of silicon quantum dots into an anisotropic three-dimensional random network 

      Ilday, S.; Ilday, F. O.; Hübner R.; Prosa, T. J.; Martin, I.; Nogay, G.; Kabacelik, I.; Mics, Z.; Bonn, M.; Turchinovich, D.; Toffoli, H.; Toffoli, D.; Friedrich, D.; Schmidt, B.; Heinig, K.-H.; Turan, R. (American Chemical Society, 2016)
      Multiscale self-assembly is ubiquitous in nature but its deliberate use to synthesize multifunctional three-dimensional materials remains rare, partly due to the notoriously difficult problem of controlling topology from ...
    • N structure for type-II superlattice photodetectors 

      Salihoglu, O.; Muti, A.; Kutluer, K.; Tansel, T.; Turan, R.; Ergun, Y.; Aydınlı, Atilla (American Institute of Physics, 2012-08-14)
      In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption ...
    • N-structure based on InAs/AlSb/GaSb superlattice photodetectors 

      Hostut, M.; Alyoruk, M.; Tansel, T.; Kilic, A.; Turan, R.; Aydınlı, Atilla; Ergun, Y. (Academic Press, 2015)
      We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies ...