Browsing by Author "Tokay, S."

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Formation of Ge nanocrystals and SiGe in PECVD grown SiNx: Ge thin films

Dana, A.; Tokay, S.; Aydınlı, Atilla (Elsevier, 2006)

Formation of Ge nanocrystals in SiNx matrices has been studied using plasma enhanced chemical vapor deposition in both as deposited samples as well as in post-vacuum annealed samples. Low temperature and short duration ...
Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

Yerli, S.; Serincan, U.; Dogan, I.; Tokay, S.; Genisel, M.; Aydınlı, Atilla; Turan, R. (AIP Publishing, 2006)

Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray ...
Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers

Dana, Aykutlu; Aǧan, S.; Tokay, S.; Aydınlı, Atilla; Finstad, T. G. (Wiley, 2007)

Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ...