Browsing by Author "Tekcan, B."
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Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors
Kumar, M.; Tekcan, B.; Okyay, Ali Kemal (Elsevier BV, 2014)A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO2 insulating layer is presented. Very low dark current of 2.24 × 10-11 A and ... -
Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
Bolat, S.; Tekcan, B.; Ozgit Akgun, C.; Bıyıklı, Necmi; Okyay, Ali Kemal (A I P Publishing LLC, 2015)Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal-semiconductor-metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) ... -
Low temperature thin films transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
Bolat, S.; Ozgit Akgun, C.; Tekcan, B.; Bıyıklı, Necmi; Okyay, Ali Kemal (AIP Publishing LLC, 2014)We report GaN thin film transistors (TFT) with a thermal budget below 250 °C. GaN thin films are grown at 200 °C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found ... -
Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
Ozgit Akgun, C.; Goldenberg, E.; Bolat, S.; Tekcan, B.; Kayaci, F.; Uyar, Tamer; Okyay, Ali Kemal; Bıyıklı, Necmi (Wiley - V C H Verlag GmbH & Co. KGaA, 2015)Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current ... -
Memory effect by charging of ultra‐small 2‐nm laser‐synthesized solution processable Si‐nanoparticles embedded in Si–Al2O3–SiO2 structure
El-Atab, N.; Rizk, A.; Tekcan, B.; Alkis, S.; Okyay, Ali Kemal; Nayfeh, A. (Wiley-VCH Verlag, 2015)A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic layer deposited high-κ dielectric Al<inf>2</inf>O<inf>3</inf> layer ... -
Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
Tekcan, B.; Ozgit Akgun, C.; Bolat, S.; Bıyıklı, Necmi; Okyay, Ali Kemal (SPIE, 2014)Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are ... -
A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation
Tekcan, B.; Alkis, S.; Alevli, M.; Dietz, N.; Ortac, B.; Bıyıklı, Necmi; Okyay, Ali Kemal (IEEE, 2014)We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical ... -
Performance enhancement of GaN metal-semiconductor-metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer
Kumar, M.; Tekcan, B.; Okyay, Ali Kemal (AVS Science and Technology Society, 2015)The authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO2 (UT-HfO2) layer on GaN. The UT-HfO2 interfacial layer is grown by atomic layer ... -
Using nanogap in label-free impedance based electrical biosensors to overcome electrical double layer effect
Okyay, Ali Kemal; Hanoglu, O.; Yuksel, M.; Acar, H.; Sülek, S.; Tekcan, B.; Agan, S.; Bıyıklı, Necmi; Güler, Mustafa O. (Springer Verlag, 2017)Point-of-care biosensor applications require low-cost and low-power solutions. They offer being easily accessible at home site. They are usable without any complex sample handling or any kind of special expertise. Impedance ... -
UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes
Alkis, S.; Tekcan, B.; Nayfeh, A.; Okyay, Ali Kemal (IOP Publishing, 2013)We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, ...