Browsing by Author "Tekcan, B."
Now showing items 1-10 of 10
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Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors
(Elsevier BV, 2014)A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO2 insulating layer is presented. Very low dark current of 2.24 × 10-11 A and ... -
Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
(A I P Publishing LLC, 2015)Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal-semiconductor-metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) ... -
Low temperature thin films transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
(AIP Publishing LLC, 2014)We report GaN thin film transistors (TFT) with a thermal budget below 250 °C. GaN thin films are grown at 200 °C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found ... -
Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
(Wiley - V C H Verlag GmbH & Co. KGaA, 2015)Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current ... -
Memory effect by charging of ultra‐small 2‐nm laser‐synthesized solution processable Si‐nanoparticles embedded in Si–Al2O3–SiO2 structure
(Wiley-VCH Verlag, 2015)A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic layer deposited high-κ dielectric Al<inf>2</inf>O<inf>3</inf> layer ... -
Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
(SPIE, 2014)Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are ... -
A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation
(IEEE, 2014)We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical ... -
Performance enhancement of GaN metal-semiconductor-metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer
(AVS Science and Technology Society, 2015)The authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO2 (UT-HfO2) layer on GaN. The UT-HfO2 interfacial layer is grown by atomic layer ... -
Using nanogap in label-free impedance based electrical biosensors to overcome electrical double layer effect
(Springer Verlag, 2017)Point-of-care biosensor applications require low-cost and low-power solutions. They offer being easily accessible at home site. They are usable without any complex sample handling or any kind of special expertise. Impedance ... -
UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes
(IOP Publishing, 2013)We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, ...
