Browsing by Author "Tasli, P."
Now showing items 1-6 of 6
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Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN
(Taylor & Francis, 2010-06-30)Low temperature electrical measurements of conductivity, the Hall effect and magnetoconductance were performed on a degenerate AlGaN sample. The sample exhibited negative magnetoconductance at low magnetic fields and low ... -
Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 ≤ x ≤ 0.135) layers
(Elsevier, 2009-10-13)The low-temperature conductivity of InxGa1-xN alloys (0.06 ≤ x ≤ 0.135) is analyzed as a function of indium composition (x). Although our InxGa1-xN alloys were on the metallic side of the metal-insulator transition, neither ... -
Double subband occupation of the two-dimensional electron gas in InxAl1-XN/AlN/GaN/AlN heterostructures with a low indium content (0.064 ≤ x ≤ 0.140) barrier
(Elsevier, 2010-05-08)We present a carrier transport study on low indium content (0.064 ≤ x ≤ 0.140) InxAl1 - xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33-300 K) and a magnetic field ... -
Grain boundary related electrical transport in Al-rich AlxGa1-xN layers grown by metal-organic chemical vapor deposition
(M A I K Nauka - Interperiodica, 2011)Electrical transport data for Al-rich AlGaN layers grown by metal-organic chemical vapor deposition (MOCVD) are presented and analyzed in the temperature range 135-300 K. The temperature dependence of electrical conductivity ... -
Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD
(ELSEVIER, 2012-06-01)We investigate the structural and electrical properties of Al xIn 1-xN/AlN/GaN heterostructures with AlGaN buffers grown by MOCVD, which can be used as an alternative to AlInN HEMT structures with GaN buffer. The effects ... -
Well parameters of two-dimensional electron gas in Al0.88In 0.12N/AlN/GaN/AlN heterostructures grown by MOCVD
(Wiley, 2009-12-01)Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al0.88In 0.12N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition ...
