Browsing by Author "Sevik, C."
Now showing items 1-20 of 26
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Alkali metal intercalation in MXene/Graphene heterostructures: a new platform for ion battery applications
(American Chemical Society, 2019)The adsorption and diffusion of Na, K, and Ca atoms on MXene/graphene heterostructures of MXene systems Sc2C(OH)2, Ti2CO2, and V2CO2 are systematically investigated by using first-principles methods. We found that alkali ... -
Auger recombination and carrier multiplication in embedded silicon and germanium nanocrystals
(The American Physical Society, 2008)For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, the Auger recombination and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential ... -
Computational modeling of quantum-confined impact ionization in Si nanocrystals embedded in SiO2
(2007)Injected carriers from the contacts to delocalized bulk states of the oxide matrix via Fowler-Nordheim tunneling can give rise to quantum-confined impact ionization (QCII) of the nanocrystal (NC) valence electrons. This ... -
CVD grown 2D MoS2 layers: a photoluminescence and fluorescence lifetime imaging study
(Wiley-VCH Verlag, 2016)In this letter, we report on the fluorescence lifetime imaging and accompanying photoluminescence properties of a chemical vapour deposition (CVD) grown atomically thin material, MoS2. µ-Raman, µ-photoluminescence (PL) and ... -
Defect states in monolayer hexagonal BN: A comparative DFT and DFT-1/2 study
(Elsevier, 2020)Hexagonal boron nitride (h-BN) acts like a semiconductor vacuum to point defects enabling stable and controllable spin states at room temperature which qualifies them for quantum technological applications. To characterize ... -
A distinct correlation between the vibrational and thermal transport properties of group VA monolayer crystals
(Royal Society of Chemistry, 2018)The investigation of thermal transport properties of novel two-dimensional materials is crucially important in order to assess their potential to be used in future technological applications, such as thermoelectric power ... -
Efficiency and harmonic enhancement trends in GaN-based Gunn diodes: Ensemble Monte Carlo analysis
(American Institute of Physics, 2004)Gallium nitride can offer a high-power alternative for millimeter-wave Gunn oscillators. Hence, an ensemble Monte Carlo-based comprehensive theoretical assessment of efficiency and harmonic enhancement in n-type GaN Gunn ... -
Electronic and optical properties of 4.2 lm‘‘N’’ structured superlattice MWIR photodetectors
(Elsevier B.V., 2013-01-05)We report on the development of a new structure for type II superlattice photodiodes that we call the ‘‘N’’ design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The ... -
Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors
(Elsevier, 2013)We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ... -
Gain and temporal response of AlGaN solar-blind avalanche photodiodes: An ensemble Monte Carlo analysis
(A I P Publishing LLC, 2003)A study was performed on temporal and gain response of AlGaN solar-blind avalanche photodiodes (APD). The ensemble Monte Carlo method was used for the purpose. It was found that without any fitting parameters, reasonable ... -
Gate induced monolayer behavior in twisted bilayer black phosphorus
(IOP Publishing, 2017)Optical and electronic properties of black phosphorus strongly depend on the number of layers and type of stacking. Using first-principles calculations within the framework of density functional theory, we investigate the ... -
High dielectric constant and wide band gap inverse silver oxide phases of the ordered ternary alloys of SiO2, GeO2, and SnO2
(The American Physical Society, 2006)High dielectric constant and wide band gap oxides have important technological applications. The crystalline oxide polymorphs having lattice constant compatibility to silicon are particularly desirable. One recently reported ... -
Hot electron effects in unipolar n-type submicron structures based on GaN, AlN and their ternary alloys
(The Institution of Engineering and Technology, 2003)The authors present an analysis of impact ionisation (II) and related hot electron effects in submicron sized GaN, AlN and their ternary alloys, all of which can support very high field regimes, reaching a few megavolts ... -
In pursuit of barrierless transition metal dichalcogenides lateral heterojunctions
(Institute of Physics Publishing, 2018)There is an increasing need to understand interfaces between two-dimensional materials to realize an energy efficient boundary with low contact resistance and small heat dissipation. In this respect, we investigated the ... -
k · p Parametrization and linear and circular dichroism in strained monolayer (janus) transition metal dichalcogenides from first-principles
(American Chemical Society, 2021-04-08)Semiconductor monolayer transition metal dichalcogenides (TMDs) have brought a new paradigm by introducing optically addressable valley degree of freedom. Concomitantly, their high flexibility constitutes a unique platform ... -
Mo2C as a high capacity anode material: a first-principles study
(Royal Society of Chemistry, 2016)The adsorption and diffusion of Li, Na, K and Ca atoms on a Mo2C monolayer are systematically investigated by using first principles methods. We found that the considered metal atoms are strongly bound to the Mo2C monolayer. ... -
MXenes/graphene heterostructures for li battery applications: a first principles study
(Royal Society of Chemistry, 2018)MXenes are the newest class of two-dimensional (2D) materials, and they offer great potential in a wide range of applications including electronic devices, sensors, and thermoelectric and energy storage materials. In this ... -
Novel high-K inverse silver oxide phases of SiO2, GeO2, SnO2, and their alloys
(Elsevier, 2006)The recently reported inverse silver oxide phase of SiO2 possesses a high dielectric constant as well as lattice constant compatibility to Si. We explore the closely related oxides, GeO2, SnO2 with the same inverse silver ... -
Peculiar piezoelectric properties of soft two-dimensional materials
(American Chemical Society, 2016-06)Group II-VI semiconductor honeycomb monolayers have a noncentrosymmetric crystal structure and therefore are expected to be important for nano piezoelectric device applications. This motivated us to perform first-principles ... -
Simulation of millimeter-wave gunn oscillations in gallium nitride
(2004)High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeterwave Gunn ...
