Browsing by Author "Saraswat, K. C."
Now showing items 1-7 of 7
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Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing
(2008-10)We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). ... -
Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers
(Elsevier, 2013)We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in ... -
Germanium for high performance MOSFETs and optical interconnects
(2008-10)It is believed that to continue the scaling of silicon CMOS innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. Recently ... -
High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration
(IEEE, 2009)We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) ... -
High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing
(American Institute of Physics, 2010-08-09)Germanium-on-insulator (GOI) is desired for high performance metal-oxide-semiconductor transistors and monolithically integrated optoelectronics. We demonstrate a promising approach to achieve single-crystal defect-free ... -
High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration
(Institute of Electrical and Electronics Engineers, 2009)We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime ... -
Selective-area high-quality germanium growth for monolithic integrated optoelectronics
(Institute of Electrical and Electronics Engineers, 2012-03-02)Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth ...
