Now showing items 1-5 of 5

    • DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric 

      Yılmaz, Doğan; Odabaşı, O.; Salkım, Gurur; Urfalı, Emirhan; Akoğlu, Büşra Çankaya; Özbay, Ekmel; Altındal, Ş. (Institute of Physics Publishing Ltd., 2022-06-23)
      In this study, an enhancement-mode (E-mode) GaN high electron mobility transistor (HEMT) with lateral tri-gate structure field effect transistor (FinFET) is proposed. To passivate the fin width, while keeping the ...
    • The effect of post-metal annealing on DC and RF performance of AlGaN/GaN HEMT 

      Akoğlu, Büşra Çankaya; Yılmaz, Doğan; Salkım, Gurur; Özbay, Ekmel (Institute of Physics Publishing Ltd., 2022-12-15)
      The effects of gate post-metal annealing (PMA) on the DC and RF characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) were investigated. The unannealed and post gate-metal annealed AlGaN/GaN HEMTs were ...
    • Impact of the low temperature ohmic contact process on DC and forward gate bias stress operation of GaN HEMT devices 

      Odabaşı, Oğuz; Ghobadi, Amir; Ghobadi, Türkan Gamze Ulusoy; Ünal, Yakup; Salkım, Gurur; Başar, Güneş; Bütün, Bayram; Özbay, Ekmel (Institute of Electrical and Electronics Engineers, 2022-08-17)
      In AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal structure and induce trap states within the bulk and surface. Expanded ...
    • Investigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniques 

      Kurt, Gökhan; Gülseren, Melisa Ekin; Salkım, Gurur; Ural, Sertaç; Kayal, Ömer Ahmet; Öztürk, Mustafa; Bütün, Bayram; Kabak, M.; Özbay, Ekmel (Institute of Electrical and Electronics Engineers Inc., 2019)
      A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch ...
    • Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs 

      Gülseren, Melisa Ekin; Kurt, Gökhan; Ulusoy Ghobadi, Türkan Gamze; Ghobadi, Amir; Salkım, Gurur; Öztürk, Mustafa; Bütün, Bayram; Özbay, Ekmel (IOP, 2019-07)
      In this paper, we report an angstrom-thick atomic layer deposited (ALD) aluminum oxide (Al2O3) dielectric passivation layer for an AlGaN/GaN high electron mobility transistor (HEMT). Our results show a 55% improvement in ...