Browsing by Author "Salkım, Gurur"
Now showing items 1-5 of 5
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DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric
(Institute of Physics Publishing Ltd., 2022-06-23)In this study, an enhancement-mode (E-mode) GaN high electron mobility transistor (HEMT) with lateral tri-gate structure field effect transistor (FinFET) is proposed. To passivate the fin width, while keeping the ... -
The effect of post-metal annealing on DC and RF performance of AlGaN/GaN HEMT
(Institute of Physics Publishing Ltd., 2022-12-15)The effects of gate post-metal annealing (PMA) on the DC and RF characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) were investigated. The unannealed and post gate-metal annealed AlGaN/GaN HEMTs were ... -
Impact of the low temperature ohmic contact process on DC and forward gate bias stress operation of GaN HEMT devices
(Institute of Electrical and Electronics Engineers, 2022-08-17)In AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal structure and induce trap states within the bulk and surface. Expanded ... -
Investigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniques
(Institute of Electrical and Electronics Engineers Inc., 2019)A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch ... -
Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs
(IOP, 2019-07)In this paper, we report an angstrom-thick atomic layer deposited (ALD) aluminum oxide (Al2O3) dielectric passivation layer for an AlGaN/GaN high electron mobility transistor (HEMT). Our results show a 55% improvement in ...
