Now showing items 1-7 of 7

    • Atomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectors 

      Salihoğlu, Ömer; Muti, Abdullah; Kutluer, Kutlu; Tansel, T.; Turan, R.; Kocabaş, Coşkun; Aydınlı, Atilla (AIP, 2012)
      Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al 2O 3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single ...
    • Gibbs free energy assisted passivation layers 

      Salihoğlu, Ömer; Tansel, T.; Hoştut, M.; Ergun, Y.; Aydınlı, Atilla (SPIE, 2016)
      Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ...
    • Graphene-Based Adaptive Thermal Camouflage 

      Salihoğlu, Ömer; Uzlu, H. B.; Yakar, Ozan; Aas, Shahnaz; Balci, Osman; Kakenov, Nurbek; Balci, S.; Olcum, S.; Süzer, Şefik; Kocabas, Coşkun (American Chemical Society, 2018)
      In nature, adaptive coloration has been effectively utilized for concealment and signaling. Various biological mechanisms have evolved to tune the reflectivity for visible and ultraviolet light. These examples inspire many ...
    • Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared 

      Tansel, T.; Kutluer, K.; Muti, Abdullah; Salihoğlu, Ömer; Aydınlı, Atilla; Turan, R. (SPIE, 2013)
      We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise ...
    • Passivation of type II InAs / GaSb superlattice photodetectors with atomic layer deposited Al2O3 

      Salihoğlu, Ömer; Muti, Abdullah; Kutluer, K.; Tansel, T.; Turan, R.; Kocabaş, Coşkun; Aydınlı, Atilla (SPIE, 2012)
      We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free ...
    • Thiol passivation of MWIR Type II superlattice photodetectors 

      Salihoğlu, Ömer; Muti, Abdullah; Aydınlı, Atilla (SPIE, 2013)
      Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps ...
    • Ultra-lightweight Chemical Vapor Deposition grown multilayered graphene coatings on paper separator as interlayer in lithium-sulfur batteries 

      Cengiz, E. C.; Salihoğlu, Ömer; Öztürk, O.; Kocabaş, Coşkun; Demir-Çakan, R. (Elsevier, 2019)
      Lithium-Sulfur (Li-S) batteries are known for their high energy density and cost-effectiveness. However, the Li-S chemistry is a challenging topic due to the shuttle effect and the use of highly reactive lithium metal ...