Now showing items 1-3 of 3

    • Light harvesting with Ge quantum dots embedded in SiO2 or Si3N4 

      Cosentino, S.; Ozen, E. S.; Raciti, R.; Mio, A. M.; Nicotra, G.; Simone, F.; Crupi, I.; Turan, R.; Terrasi, A.; Aydınlı, Atilla; Mirabella, S. (A I P Publishing LLC, 2014)
      Germanium quantum dots (QDs) embedded in SiO2or in Si3N4have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850°C to ...
    • The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects 

      Cosentino, S.; Mio, A. M.; Barbagiovanni, E. G.; Raciti, R.; Bahariqushchi, R.; Miritello, M.; Nicotra, G.; Aydınlı, Atilla; Spinella, C.; Terrasi, A.; Mirabella, S. (Royal Society of Chemistry, 2015)
      Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally ...
    • Stress evolution of Ge nanocrystals in dielectric matrices 

      Bahariqushchi, R.; Raciti, R.; Kasapoǧlu, A. E.; Gür, E.; Sezen, M.; Kalay, E.; Mirabella, S.; Aydınlı, Atilla (Institute of Physics Publishing, 2018)
      Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing ...