Now showing items 1-2 of 2

    • Ge/SiGe quantum well p-i-n structures for uncooled infrared bolometers 

      Atar, F. B.; Yesilyurt, A.; Onbasli, M. C.; Hanoglu, O.; Okyay, Ali Kemal (IEEE, 2011-09-18)
      The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance ...
    • Silicon-Germanium multi-quantum well photodetectors in the near infrared 

      Onaran, E.; Onbasli, M. C.; Yesilyurt, A.; Yu, H. Y.; Nayfeh, A. M.; Okyay, Ali Kemal (Optical Society of American (OSA), 2012)
      Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. ...