Now showing items 1-3 of 3

    • 100-GHz resonant cavity enhanced Schottky photodiodes 

      Onat, B. M.; Gökkavas, M.; Özbay, Ekmel; Ata, E. P.; Towe, E.; Ünlü, M. S. (Institute of Electrical and Electronics Engineers, 1998)
      Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in optical communications and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE ...
    • Design and optimization of high-speed resonant cavity enhanced Schottky photodiodes 

      Gökkavas, M.; Onat, B. M.; Özbay, Ekmel; Ata, E. P.; Xu, J.; Towe, E.; Ünlü, M. S. (Institute of Electrical and Electronics Engineers, 1999-02)
      Resonant cavity enhanced (RCE) photodiodes (PD's) are promising candidates for applications in optical communications and interconnects where high-speed high-efficiency photodetection is desirable. In RCE structures, the ...
    • High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation 

      Ünlü, M. S.; Gökkavas, M.; Onat, B. M.; Ata, E.; Özbay, Ekmel; Mirin, R. P.; Knopp, K. J.; Bertness, K. A.; Christensen, D. H. (A I P Publishing LLC, 1998-05-25)
      High-speed resonant cavity enhanced Schottky photodiodes operating in 800-850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent ...