Now showing items 1-3 of 3

    • Fabrication of high-speed resonant cavity enhanced schottky photodiodes 

      Özbay, Ekmel; Islam, M. S.; Onat, B.; Gökkavas, M.; Aytür, O.; Tuttle, G.; Towe, E.; Henderson, R. H.; Ünlü, M. S. (Institute of Electrical and Electronics Engineers, 1997-05)
      We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption ...
    • High-speed resonant-cavity-enhanced Schottky photodiodes 

      Ata, Erhan P.; Bıyıklı, Necmi; Demirel, Ekrem; Özbay, Ekmel; Gökkavas, M.; Onat, B.; Ünlü, M. S.; Tuttle, G. (IEEE, 1998)
      The top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. Fabrication started with formation of ohmic contacts to n+ layers. Mesa isolation was followed by a ...
    • Tuning electronic properties of monolayer hexagonal boron phosphide with group III-IV-V dopants 

      Onat, B.; Hallioglu, L.; Ipek, S.; Durgun, Engin (American Chemical Society, 2017-02)
      An extensive study on doping of two-dimensional (2D) hexagonal boron phosphide (h-BP) which is a direct band gap semiconductor was performed by using ab initio methods based on spin-polarized density functional theory. The ...