Browsing by Author "Nayfeh, A."
Now showing items 1-20 of 26
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2-nm laser-synthesized Si nanoparticles for low-power charge trapping memory devices
(IEEE, 2014-08)In this work, the effect of embedding Silicon Nanoparticles (Si-NPs) in ZnO based charge trapping memory devices is studied. Si-NPs are fabricated by laser ablation of a silicon wafer in deionized water followed by sonication ... -
∼3-nm ZnO nanoislands deposition and application in charge trapping memory grown by single ALD step
(Nature Publishing Group, 2016)Low-dimensional semiconductor nanostructures are of great interest in high performance electronic and photonic devices. ZnO is considered to be a multifunctional material due to its unique properties with potential in ... -
Charge Trapping Memory with 2.85-nm Si-Nanoparticles Embedded in HfO2
(ECS, 2015-05)In this work, the effect of embedding 2.85-nm Si-nanoparticles charge trapping layer in between double layers of high-κ Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> oxides is studied. Using high frequency (1 MHz) ... -
Comparative study of thin film n-i-p a-Si: H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles
(Elsevier Ltd, 2015)In this paper, the effect of gold nanoparticles on n-i-p a-Si:H solar cells with different intrinsic layer (i-layer) thicknesses has been studied. 100nm and 500nm i-layer based n-i-p a-Si:H solar cells were fabricated and ... -
Corrigendum: Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles (2015 J. Opt. 17 105903)
(IOP, 2019)In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements ... -
Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices
(Institute of Physics Publishing Ltd., 2017)The manipulation of matter at the nanoscale enables the generation of properties in a material that would otherwise be challenging or impossible to realize in the bulk state. Here, we demonstrate growth of zirconia ... -
Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
(AIP Publishing, 2013)A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) ... -
Effect of gold nanoparticles size on light scattering for thin film amorphous-silicon solar cells
(Elsevier Ltd, 2014-05)In this work, the effect of gold (Au) nanoparticles on the performance of a-Si:H solar cells is investigated experimentally. The solar cell stack is grown on a highly doped p-type Si wafer and consists of 20nm heavily doped ... -
Enhanced light scattering with energy downshifting using 16 nm indium nitride nanoparticles for improved thin-film a-Si N-i-P solar cells
(Electrochemical Society Inc., 2015-05)In this work the effect of Indium nitride (InN) nanoparticles (NPs) on the performance of a-Si: H solar cells has been investigated. The average J<inf>sc</inf> of InN NPs coated cells was found 6.76 mA/cm2 which is 16.69% ... -
Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer
(AIP Publishing, 2014)In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al2O3 layers are ... -
Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer
(AIP Publishing, 2014)A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage Vt shift (4 V) at low operating voltage (6/-6 V), good retention ... -
Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide
(Springer New York LLC, 2015)In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the ... -
Enhancement in c-Si solar cells using 16 nm InN nanoparticles
(IOP Publishing, 2016-05)In this work, 16 nm indium nitride (InN) nanoparticles (NPs) are used to increase the performance of thin-film c-Si HIT solar cells. InN NPs were spin-coated on top of an ITO layer of c-Si HIT solar cells. The c-Si HIT ... -
Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles
(Institute of Physics Publishing Ltd., 2015)In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements ... -
Graphene Nanoplatelets Embedded in HfO2 for MOS Memory
(Electrochemical Society Inc., 2015)In this work, a MOS memory with graphene nanoplatelets charge trapping layer and a double layer high-κ Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> tunnel oxide is demonstrated. Using C-V<inf>gate</inf> measurements, the ... -
Growth of ∼3-nm ZnO nano-islands using Atomic layer deposition
(IEEE, 2016)In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force ... -
Improved efficiency of thin film a-Si:H solar cells with Au nanoparticles
(Institute of Electrical and Electronics Engineers Inc., 2013)In this work, the effect of Au nanoparticles on the performance of a-Si:H solar cells is investigated experimentally. Au nanoparticles of 10, 20, 50, 80, 100, 200 and 400 nm are spin coated on ITO before metallization. The ... -
Low power Zinc-Oxide based charge trapping memory with embedded silicon nanoparticles
(ECS, 2014)In this work, a bottom-gate charge trapping memory device with Zinc-Oxide (ZnO) channel and 2-nm Si nanoparticles (Si-NPs) embedded in ZnO charge trapping layer is demonstrated. The active layers of the memory device are ... -
Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission
(2014)A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The charge trapping layer is formed by spin coating 2 nm silicon nanoparticles between Atomic Layer Deposited ... -
Memory effect by charging of ultra‐small 2‐nm laser‐synthesized solution processable Si‐nanoparticles embedded in Si–Al2O3–SiO2 structure
(Wiley-VCH Verlag, 2015)A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic layer deposited high-κ dielectric Al<inf>2</inf>O<inf>3</inf> layer ...
