Now showing items 1-4 of 4

    • A Comparative Passivation Study for InAs / GaSb Pin Superlattice Photodetectors 

      Salihoglu, O.; Muti, A.; Aydınlı, Atilla (IEEE Institute of Electrical and Electronics Engineers, 2013-08)
      In the quest to find ever better passivation techniques for infrared photodetectors, we explore several passivation layers using atomic layer deposition (ALD). We compare the impact of these layers on detectors fabricated ...
    • N structure for type-II superlattice photodetectors 

      Salihoglu, O.; Muti, A.; Kutluer, K.; Tansel, T.; Turan, R.; Ergun, Y.; Aydınlı, Atilla (American Institute of Physics, 2012-08-14)
      In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption ...
    • Skin-like self-assembled monolayers on InAs / GaSb superlattice photodetectors 

      Salihoglu, O.; Muti, A.; Kutluer, K.; Tansel, T.; Turan, R.; Aydınlı, Atilla (IOP Institute of Physics Publishing, 2012)
      We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH 3[CH 2] 17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a ...
    • Surface recombination noise in InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Muti, A.; Salihoglu, Ö.; Aydınlı, Atilla; Turan, R. (IOP Institute of Physics Publishing, 2013)
      The standard Schottky noise approach alone is not sufficient to describe the noise mechanism in an InAs/GaSb superlattice photodetector at reverse negative bias. The additional noise identified appears at surface activation ...