Now showing items 1-8 of 8

    • Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Salihoglu, Ö.; Aydınlı, Atilla; Aslan, B.; Arikan, B.; Kilinc, M. C.; Ergun, Y.; Serincan, U.; Turan, R. (IEEE, 2012)
      The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ...
    • Electronic and optical properties of 4.2 lm‘‘N’’ structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydınlı, Atilla (Elsevier B.V., 2013-01-05)
      We report on the development of a new structure for type II superlattice photodiodes that we call the ‘‘N’’ design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The ...
    • Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydınlı, Atilla (Elsevier, 2013)
      We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ...
    • Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared 

      Tansel, T.; Kutluer, K.; Muti, Abdullah; Salihoğlu, Ömer; Aydınlı, Atilla; Turan, R. (SPIE, 2013)
      We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise ...
    • N structure for type-II superlattice photodetectors 

      Salihoglu, O.; Muti, A.; Kutluer, K.; Tansel, T.; Turan, R.; Ergun, Y.; Aydınlı, Atilla (American Institute of Physics, 2012-08-14)
      In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption ...
    • Passivation of type II InAs / GaSb superlattice photodetectors with atomic layer deposited Al2O3 

      Salihoğlu, Ömer; Muti, Abdullah; Kutluer, K.; Tansel, T.; Turan, R.; Kocabaş, Coşkun; Aydınlı, Atilla (SPIE, 2012)
      We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free ...
    • Skin-like self-assembled monolayers on InAs / GaSb superlattice photodetectors 

      Salihoglu, O.; Muti, A.; Kutluer, K.; Tansel, T.; Turan, R.; Aydınlı, Atilla (IOP Institute of Physics Publishing, 2012)
      We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH 3[CH 2] 17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a ...
    • Surface recombination noise in InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Muti, A.; Salihoglu, Ö.; Aydınlı, Atilla; Turan, R. (IOP Institute of Physics Publishing, 2013)
      The standard Schottky noise approach alone is not sufficient to describe the noise mechanism in an InAs/GaSb superlattice photodetector at reverse negative bias. The additional noise identified appears at surface activation ...