Browsing by Author "Kutlu, E."
Now showing items 1-9 of 9
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Ab initio study of electronic properties of armchair graphene nanoribbons passivated with heavy metal elements
(Elsevier, 2019)In this study, electronic properties of graphene nanoribbons with armchair edges (AGNRs) have been investigated with Density Functional Theory (DFT). Effects of heavy metal (HM) elements, including Zinc (Zn), Cadmium (Cd) ... -
Effect of substitutional as impurity on electrical and optical properties of β-Si3N4 structure
(Elsevier Ltd, 2016)β-Si3N4 is used as the gate dielectric for surface passivation in GaN-based, high-electron mobility transistors(HEMTs). In this study, the electrical and optical characteristics of the hexagonal β-Si3N4 crystal structure ... -
Electronic and optical properties of black phosphorus doped with Au, Sn and I atoms
(Taylor and Francis, 2018)In this study, the electronic and the optical properties of monolayer black phosphorus (BP) doped with Gold (Au), Tin (Sn) and Iodine (I) atoms have been investigated by the density-functional theory (DFT) method. In the ... -
Electronic properties of graphene nanoribbons doped with zinc, cadmium, mercury atoms
(Elsevier B.V., 2018)The effect of substitutional impurities as Zinc (Zn), Cadmium (Cd) and Mercury (Hg) on electronic properties of graphene nanoribbons (GNRs) was investigated by using Density Functional Theory (DFT). A substantial change ... -
Electronic properties of Li-doped zigzag graphene nanoribbons
(Elsevier B.V., 2016)Zigzag graphene nanoribbons (ZGNRs) are known to exhibit metallic behavior. Depending on structural properties such as edge status, doping and width of nanoribbons, the electronic properties of these structures may vary. ... -
Electronic properties of zigzag ZnO nanoribbons with hydrogen and magnesium passivations
(Elsevier, 2018)In this study, the electronic properties of ZnO nanoribbons with zigzag edges (ZZnONr) have been investigated with Density Functional Theory (DFT). After a geometric optimization, the electronic band structures, the density ... -
Electronic structure of β-Si3N4 crystals with substitutional icosagen group impurities
(National Institute of Optoelectronics, 2017)The β-Si3N4 crystals are widely used in industrial and electronics areas. Therefore, β-Si3N4 has drawn the attention of researchers for many years. In this study, effects of icosagen group impurity atoms in the IIIA group ... -
A first principles investigation of the effect of aluminum, gallium and indium impurities on optical properties of β-Si3N4 structure
(Elsevier GmbH, 2017)In this study, effects of some impurity atoms included in IIIA group such as Al, Ga, and In on the optical properties of the β-Si3N4 structure have been discussed. The calculations were made using Density Functional Theory ... -
Negative differential resistance observation and a new fitting model for electron drift velocity in GaN-based heterostructures
(Institute of Electrical and Electronics Engineers, 2018)The aim of this paper is an investigation of electric field-dependent drift velocity characteristics for Al0.3Ga0.7N/AlN/GaN heterostructures without and with in situ Si3N4 passivation. The nanosecond-pulsed current-voltage ...
