Browsing by Author "Kurt, Gökhan"
Now showing items 1-6 of 6
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Design of multi-octave band GaN-HEMT power amplifier
(IEEE, 2012)This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride ... -
Investigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniques
(Institute of Electrical and Electronics Engineers Inc., 2019)A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch ... -
Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs
(IOP, 2019-07)In this paper, we report an angstrom-thick atomic layer deposited (ALD) aluminum oxide (Al2O3) dielectric passivation layer for an AlGaN/GaN high electron mobility transistor (HEMT). Our results show a 55% improvement in ... -
Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment
(Elsevier, 2019)We demonstrate the electrical performances of an AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with low gate leakage current (Ig). A low gate leakage current as low as the order of ... -
Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates
(SPIE, 2019-02)A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer ... -
Structural field plate length optimization for high power applications
(IEEE, 2014)In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate ...
