Browsing by Author "Kumar, M."
Now showing items 1-5 of 5
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Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors
(Elsevier BV, 2014)A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO2 insulating layer is presented. Very low dark current of 2.24 × 10-11 A and ... -
Effect of O2/Ar flow ratio and post-deposition annealing on the structural, optical and electrical characteristics of SrTiO3 thin films deposited by RF sputtering at room temperature
(Elsevier, 2015)SrTiO3 (STO) thin films have been prepared by reactive RF magnetron sputtering on Si (100) and UV fused silica substrates at room temperature. The effect of oxygen flow on film characteristics was investigated at a total ... -
Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector
(Institute of Physics Publishing, 2016)We report on the fabrication and characterization of a Schottky ultraviolet graphene/AlGaN/GaN photodetector (PD). The fabricated device clearly exhibits rectification behaviour, indicating that the Schottky barrier is ... -
Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface
(Pergamon Press, 2015)Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at ... -
Performance enhancement of GaN metal-semiconductor-metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer
(AVS Science and Technology Society, 2015)The authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO2 (UT-HfO2) layer on GaN. The UT-HfO2 interfacial layer is grown by atomic layer ...
