Browsing by Author "Kimukin, İbrahim"

Now showing items 1-15 of 15

    • 45 GHz bandwidth-efficiency resonant cavity enhanced ITO-Schottky photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Özbay, Ekmel; Gökkavas, M.; Ünlü, M. S. (OSA, 2001)
      We demonstrated high-performance resonant cavity enhanced ITO-Schottky photodiodes. We achieved a peak efficiency of 75% around 820 nm with a 3-dB bandwidth of 60 GHz resulting in a bandwidth-efficiency product of 45 GHz.

    • High speed and high efficiency infrared photodetectors 

      Kimukin, İbrahim (Bilkent University, 2004)
      The increasing demand for telecommunication systems resulted in production of high performance components. Photodetectors are essential components of optoelectronic integrated circuits and fiber optic communication ...

    • High-performance 1.55 μm resonant cavity enhanced photodetector 

      Kimukin, İbrahim; Bıyıklı, Necmi; Özbay, Ekmel (IEEE, 2002)
      A high speed and high efficiency resonant cavity enhanced InGaAs based photodetector was demonstrated. A peak quantum efficiency of 66% was measured along with 31 GHz bandwidth with the device. The photoresponse was found ...

    • High-performance ALGaN-based visible-blind resonant cavity enhanced Schottky photodiodes 

      Kimukin, İbrahim; Bıyıklı, Necmi; Kartaloğlu, Tolga; Aytür, Orhan; Özbay, Ekmel (Materials Research Society, 2003-04)
      We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were ...

    • High-performance ITO-AlAs/GaAs based resonant cavity enhanced Schottky photodiodes 

      Özbay, Ekmel; Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan (IEEE, 1999)
      The fabrication of ITO (indium tin oxide)-AlAs-based resonant cavity enhanced Schottky photodiodes was examined. The device structure was designed to achieve a low-loss cavity around a 840 nm optical communication window. ...

    • High-performance solar-blind AlGaN photodetectors 

      Özbay, Ekmel; Bıyıklı, Necmi; Kimukin, İbrahim; Tut, Turgut; Kartaloğlu, Tolga; Aytür, Orhan (IEEE, 2004)
      High-performance aluminum gallium nitride (AlGaN)-based solar-blind (SB) photodetectors were demonstrated using different device structures. The Al x-Ga1-xN layers structure were grown by metalorganic chemical vapor ...

    • High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector 

      Kimukin, İbrahim; Özbay, Ekmel; Bıyıklı, Necmi; Kartaloğlu, Tolga; Aytür, Orhan; Tuttle, G. (IEEE, 2000)
      Resonant cavity enhanced (RCE) photodetectors offer the possibility of overcoming the low quantum efficiency limitation of conventional photodetectors. The RCE detectors are based on the enhancement of the optical field ...

    • High-speed GaAs-based resonant-cavity-enhanced 1.3-μm photodetector 

      Özbay, Ekmel; Kimukin, İbrahim; Bıyıklı, Necmi; Gary, T. (SPIE, 2000)
      High-speed photodetectors operating at 1.3 and 1.55 μm are important for long distance fiber optic based telecommunication applications. We fabricated GaAs based photodetectors operating at 1.3 μm that depend on internal ...

    • High-speed InGaAs based resonant cavity enhanced p-i-n photodiodes 

      Kimukin, İbrahim; Bıyıklı, Necmi; Özbay, Ekmel (IEEE, 2001)
      High-speed InGaAs based resonant cavity enhanced photodiodes were discussed. The responses of the photodiodes was measured under high incident optical powers. Bandwidth-efficiency (BWE) product was used to measure the ...

    • High-speed solar-blind AlGaN Schottky photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Kartaloğlu, Tolga; Aytür, Orhan; Özbay, Ekmel (Cambridge University Press, 2003)
      We report high-speed solar-blind AlGaN-based Schottky photodiodes. AlGaN/GaN heterostructure device layers were grown on sapphire substrate. The devices were fabricated on AlGaN/GaN heterostructuresusing a microwave ...

    • High-speed solar-blind AlGaN-based metal-semiconductor-metal photodetectors 

      Bıyıklı, Necmi; Kimukin, İbrahim; Kartaloğlu, Tolga; Aytür, Orhan; Özbay, Ekmel (Wiley, 2003)
      Solar-blind AlGaN metal-semiconductor-metal (MSM) photodetectors with fast pulse response have been demonstrated. The devices were fabricated on MOCVD-grown epitaxial Al0.38Ga0.62N layers, using a microwave compatible ...

    • High-speed visible-blind GaN-based ITO-Schottky photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Kartaloğlu, Tolga; Aytür, Orhan; Özbay, Ekmel (SPIE, 2002)
      In this paper we present our efforts on the design, fabrication and characterization of high-speed, visible-blind, GaN-based ultra-violet (UV) photodiodes using indium-tin-oxide (ITO) Schottky contacts. ITO is known as a ...

    • High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Gökkavas, M.; Ulu, G.; Mirin, R.; Christensen, D. H.; Ünlü, M. S.; Özbay, Ekmel (IEEE, 1998)
      Widely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity ...

    • Long wavelength GaAs based hot electron photoemission detectors 

      Kimukin, İbrahim (Bilkent University, 1999)
      The increasing rate of telecommunication alters both science and technology, and demands high performance components. Photo detectors are essential components of optoelectronic integrated circuits and fiber optic ...

    • Ultrafast and highly efficient resonant cavity enhanced photodiodes 

      Özbay, Ekmel; Kimukin, İbrahim; Bıyıklı, Necmi (SPIE, 2003-09)
      In this talk, we will review our research efforts on resonant cavity enhanced (RCE) high-speed high-efficiency photodiodes (PDs) operating in the 1st and 3rd optical communication windows. Using a microwave compatible ...