Browsing by Author "Haider A."
Now showing items 1-13 of 13
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Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors
(Institute of Physics Publishing, 2017)In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional ... -
Comparison of trimethylgallium and triethylgallium as "ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2016-02)GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used ... -
Effect of O2/Ar flow ratio and post-deposition annealing on the structural, optical and electrical characteristics of SrTiO3 thin films deposited by RF sputtering at room temperature
(Elsevier, 2015)SrTiO3 (STO) thin films have been prepared by reactive RF magnetron sputtering on Si (100) and UV fused silica substrates at room temperature. The effect of oxygen flow on film characteristics was investigated at a total ... -
Enhanced photoresponse of conformal TiO2/Ag nanorod array-based Schottky photodiodes fabricated via successive glancing angle and atomic layer deposition
(AVS Science and Technology Society, 2015)In this study, the authors demonstrate a proof of concept nanostructured photodiode fabrication method via successive glancing angle deposition (GLAD) and atomic layer deposition (ALD). The fabricated metal-semiconductor ... -
Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
(AIP Publishing, 2014-09-08)Aluminum nitride (AlN)/boron nitride (BN) bishell hollow nanofibers (HNFs) have been fabricated by successive atomic layer deposition (ALD) of AlN and sequential chemical vapor deposition (CVD) of BN on electrospun polymeric ... -
Fabrication of flexible polymer–GaN core–shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
(Royal Society of Chemistry, 2015)Here we demonstrate the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) processes by fabricating flexible polymer-GaN organic-inorganic core-shell nanofibers at a ... -
Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: a feasibility study for III-nitrides
(AVS Science and Technology Society, 2018)Plasma-assisted atomic layer deposition (PA-ALD) is a promising method for low-temperature growth of III-nitride materials. However, selective film deposition using PA-ALD is challenging mainly due to the plasma-incompatibility ... -
Long-range ordered vertical III-nitride nano-cylinder arrays: Via plasma-assisted atomic layer deposition
(Royal Society of Chemistry, 2018)In this work, we demonstrate vertical GaN, AlN, and InN hollow nano-cylindrical arrays (HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated lowerature plasma-assisted atomic layer deposition ... -
Low-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2/H2 Plasma
(Wiley-Blackwell Publishing, Inc., 2014)Hexagonal boron nitride (hBN) thin films were deposited on silicon and quartz substrates using sequential exposures of triethylboron and N 2 /H 2 plasma in a hollow-cathode plasma- assisted atomic layer deposition reactor ... -
Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition
(Royal Society of Chemistry, 2015-08)Herein, we report on atomic layer deposition of ternary InxGa1−xN alloys with different indium contents using a remotely integrated hollow cathode plasma source. Depositions were carried out at 200 °C using organometallic ... -
Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
(AVS Science and Technology Society, 2016)In this work, the authors have performed sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN alloys at a growth temperature of 450 °C. Triethylboron, triethylgallium, trimethylindium, and N2 or ... -
Nanoscale selective area atomic layer deposition of TiO2 using e-beam patterned polymers
(Royal Society of Chemistry, 2016)Here, we report nano-patterning of TiO2via area selective atomic layer deposition (AS-ALD) using an e-beam patterned growth inhibition polymer. Poly(methylmethacrylate) (PMMA), polyvinylpyrrolidone (PVP), and octafluorocyclobutane ... -
Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
(AIP Publishing LLC, 2016-02)Gallium nitride films were grown by hollow cathode plasma-assisted atomic layer deposition using triethylgallium and N2/H2 plasma. An optimized recipe for GaN film was developed, and the effect of substrate temperature was ...
