Browsing by Author "Haider, Ali"
Now showing items 1-8 of 8
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Area-selective atomic layer deposition of noble metals: polymerized fluorocarbon layers as effective growth inhibitors
Deminskyi, Petro; Haider, Ali; Eren, Hamit; Khan, Talha Masood; Bıyıklı, Necmi (AVS Science and Technology Society, 2021-01-29)The increasingly complex nanoscale three-dimensional and multilayered structures utilized in nanoelectronic, catalytic, and energy conversion/storage devices necessitate novel substrate-selective material deposition ... -
Atomic layer deposition of III-nitrides and metal oxides : their application in area selective ALD
Haider, Ali (Bilkent University, 2017-07)III-nitride compound semiconductor materials (GaN, AlN, and InN) and their alloys have generated significant interest in both basic research and commercial applications mainly in the field of photonics, energy storage, ... -
Atomic layer deposition of ruthenium nanoparticles on electrospun carbon nanofibers: a highly efficient nanocatalyst for the hydrolytic dehydrogenation of methylamine borane
Khalily, Mohammad Aref; Yurderi, M.; Haider, Ali; Bulut, A.; Patil, Bhushan; Zahmakiran, M.; Uyar, Tamer (American Chemical Society, 2018)We report the fabrication of a novel and highly active nanocatalyst system comprising electrospun carbon nanofiber (CNF)-supported ruthenium nanoparticles (NPs) (Ru@CNF), which can reproducibly be prepared by the ozone-assisted ... -
Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
Haider, Ali; Kizir, Seda; Deminskyi, P.; Tsymbalenko, Oleksandr; Leghari, Shahid Ali; Bıyıklı, Necmi; Alevli, M.; Gungor, N. (IEEE, 2016)GaN thin films grown by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) at two different substrate temperatures (250 and 450 °C) are compared. Effect of two different Ga source materials named as ... -
Growth and characterization of boron nitride thin films and nanostructures using atomic layer deposition = Bor nitrür ince filmlerin ve nanoyapıların atomik katman biriktirme yöntemi ile büyütülmesi ve karakterizasyonu
Haider, Ali (Bilkent University, 2014)Being a member of III-nitride family, boron nitride (BN) and its nanostructures have recently attracted a lot of attention, mainly due to their distinctive and superior material properties, including wide band gap, ... -
Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures
Bıyıklı, Necmi; Ozgit-Akgun, Çağla; Goldenberg, Eda; Haider, Ali; Kızır, Seda; Uyar, Tamer; Bolat, Sami; Tekcan, Burak; Okyay, Ali Kemal (IEEE, 2015)Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of ... -
Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
Deminskyi, Petro; Haider, Ali; Bıyıklı, Necmi; Ovsianitsky, A.; Tsymbalenko, A.; Kotov, D.; Matkivskyi, V.; Liakhova, N.; Osinsky, V. (IEEE, 2016)The paper consider oxygen contamination of HCPA ALD grown GaN films under an air conditioning and during different time duration. High resolution XPS analysis of HCPA ALD grown GaN films after diluted 1:10 HF(41 %) : H2O ... -
Zno nanostructures via hydrothermal synthesis on atomic layer deposited seed-layers
Orlov, A.; Ulianova, V.; Bogdan, O.; Pashkevich, G.; Bıyıklı, Necmi; Goldenberg, Eda; Haider, Ali (IEEE, 2015)The original results of two different types of ZnO nanostructures grown via hydrothermal synthesis on ZnO seed-layers coated by atomic layer deposition process on Si substrates were presented. Scanning electron microscopy ...