Browsing by Author "Gasanly, N. M."

Now showing items 1-20 of 27

    • Anharmonic line shift and linewidth of the Raman modes in TlInS2 layered crystals 

      Yuksek, N. S.; Gasanly, N. M.; Aydınlı, Atilla (John Wiley & Sons Ltd., 2004)
      The temperature dependence of the unpolarized Raman spectra from TlInS 2 layered crystal was measured between 10 and 300 K. The analysis of the experimental data showed that the temperature dependences of wavenumbers and ...

    • Anharmonicity in GaTe layered crystals 

      Aydınlı, Atilla; Gasanly, N. M.; Uka, A.; Efeoglu, H. (Wiley-VCH Verlag GmbH & Co. KGaA, 2002)
      The temperature dependencies (10-300 K) of seven Raman-active mode frequencies in layered semiconductor gallium telluride have been measured in the frequency range from 25 to 300 cm -1. Softening and broadening of the ...

    • Anharmonicity of zone-center optical phonons: Raman scattering spectra of GaSe0.5S0.5 layered crystal 

      Gasanly, N. M.; Aydınlı, Atilla; Kocabas, C.; Özkan H. (IOPscience, 2002)
      The temperature dependencies (10-300 K) of the eight Raman-active mode frequencies and linewidths in GaSe0.5S0.5 layered crystal have been measured in the frequency range from 10 to 320 cm-1. We observed softening and ...

    • Defect luminescence in some layered binary chalcogenide semiconductors 

      Aydınlı, Atilla; Gasanly, N. M. (Scientific.Net, 2002)
      A number of semiconductors such as GaS, GaSe, GaSSe show layered structure where intralayer bonding is strong and interlayer bonding quite weak. With bandgaps mostly in the visible and the near infrared and high crystal ...

    • Defect luminescence in undoped p-type GaSe 

      Aydınlı, Atilla; Gasanly, N. M.; Gökşen, K. (Taylor & Francis, 2001)
      Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide ...

    • Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity 

      Gasanly, N. M.; Serpengüzel, A.; Gürlü, O.; Aydınlı, A.; Yılmaz, I. (Pergamon Press, 1998)
      The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band ...

    • Donor-acceptor pair recombination in AgIn5S8 single crystals 

      Gasanly, N. M.; Serpengüzel, A.; Aydınlı, Atilla; Gürlü, O.; Yilmaz, I. (American Institute of Physics, 1999-03-15)
      Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV at 10 K and an excitation ...

    • Donor-acceptor pair recombination in gallium sulfide 

      Aydınlı, Atilla; Gasanly, N. M.; Goksen, K. (American Institute of Physics, 2000-12-15)
      Low temperature photoluminescence of GaS single crystals shows three broad emission bands below 2.4 eV. Temperature and excitation light intensity dependencies of these bands reveal that all of them originate from close ...

    • Infrared photoluminescence from TlGaS2 layered single crystals 

      Yuksek, N. S.; Gasanly, N. M.; Aydınlı, Atilla; Ozkan, H.; Acikgoz, M. (Wiley - V C H Verlag GmbH & Co., 2004)
      Photolimuniscence (PL) spectra of TlGaS2 layered crystals were studied in the wavelength region 500-1400 nm and in the temperature range 15-115 K. We observed three broad bands centered at 568 nm (A-band), 718 nm (B-band) ...

    • Low temperature photoluminescence spectra of InS single crystals 

      Gasanly, N. M.; Aydınlı, Atilla (Elsevier, 1997-03)
      Photoluminescence (PL) spectra of InS were investigated in the wavelength region 477.5–860 nm and in the temperature range 8.5–293 K. We observed three PL bands centered at 605 nm (A-band), 626 nm (B-band) and 820 nm ...

    • Low-temperature phase transitions in TlGaS2 layer crystals 

      Aydınlı, Atilla; Ellialtioǧlu, R.; Allakhverdiev, K. R.; Ellialtioǧlu, S.; Gasanly, N. M. (Pergamon Press, 1993)
      Polarized Raman scattering spectra of TlGaS2 layer crystals have been studied for the first time as a function of temperature between 8.5 and 295 K. No evidence for a soft mode behaviour has been found. The anomalies ...

    • Low-temperature photoluminescence spectra of layered semiconductor TlGaS2 

      Gasanly, N. M.; Aydınlı, Atilla; Bek, A.; Yilmaz, I. (Pergamon Press, 1998)
      Photoluminescence (PL) spectra of TlGaS2 layered single crystals were studied in the wavelength region 500-860 nm and in the temperature range 9.5-293 K. We observed a total of three PL bands centered at 568 nm (2.183 eV, ...

    • Low-temperature photoluminescence spectra of TlInxGa1-xS2 layer mixed crystals 

      Allakhverdiev, K. R.; Gasanly, N. M.; Aydınlı, Atilla (Pergamon Press, 1995)
      Low-temperature photoluminescence spectra of TlInS2, TlIn0.95Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374 eV (A), 2.570 eV (E) and ...

    • Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals 

      Aydnl, A.; Gasanly, N. M.; Gökşen, K. (Elsevier Science, 2001)
      Photoluminescence (PL) spectra of GaS0.5Se0.5 layered single crystals have been studied in the wavelength range of 565-860 nm and in the temperature range of 15-170 K. Two PL bands centered at 585 nm (2.120 eV) and 640 nm ...

    • Low-temperature Raman scattering spectra of GaSexS1-x layered mixed crystals 

      Gasanly, N. M.; Aydınlı, Atilla (WILEY-VCH Verlag GmbH & Co. KGaA, 2002)
      Raman scattering has been used to study the vibrational spectra of GaSexS1-x layered mixed crystals at 10 K. We report the frequency dependencies of different modes on composition x, with particular emphasis on A′1 (2) ...

    • Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal 

      Gasanly, N. M.; Serpengüzel, A.; Aydınlı, A.; Baten, S. M. A. (Elsevier Science Publishers B.V., Amsterdam, Netherlands, 2000)
      The photoluminescence (PL) spectra of TlGaSe2 layered single crystals were investigated in the 8.5-35 K temperature. 0.2-15.2 W cm-2 excitation laser intensity, and in the 600-700 nm wavelength range. The PL spectrum has ...

    • Radiative donor-acceptor pair recombination in TlInS2 single crystals 

      Aydınlı, A.; Gasanly, N. M.; Yılmaz, I.; Serpengüzel, A. (Institute of Physics Publishing, 1999)
      Photoluminescence (PL) spectra of TlInS2 layered single crystals were investigated in the 500-860 nm wavelength region and in the 11.5-100 K temperature range. We observed two PL bands centred at 515 nm (2.41 eV, A band) ...

    • Resonant Raman scattering near the free-to-bound transition in undoped p-GaSe 

      Gasanly, N. M.; Aydınlı, A.; Özkan, H. (Wiley, 2001)
      Raman spectra of GaSe layered crystal have been measured using a He-Ne laser and temperature tuning the free-to-bound gap in the range 10-290 K. Resonance enhancement of E’’(2) mode has been observed for both incident ...

    • Temperature dependence of Raman-active modes of TIGaS2 layered crystals: An anharmonicity study 

      Yuksek, N. S.; Gasanly, N. M.; Ozkan, H.; Aydınlı, Atilla (Korean Physical Society, 2004)
      The temperature dependence (16 - 300 K) of unpolarized Raman spectra from TIGaS2 layered crystals was measured in the frequency range of 10 - 400 cm-1. The analysis of the experimental data showed that the temperature ...

    • Temperature dependence of the first-order Raman scattering in GaS layered crystals 

      Gasanly, N. M.; Aydınlı, A.; Özkan, H.; Kocabaş, C. (Pergamon Press, 2000)
      The temperature dependence (15-293 K) of the six Raman-active mode frequencies and linewidths in gallium sulfide has been measured in the frequency range from 15 to 380 cm-1. We observed softening and broadening of the ...