Browsing by Author "Finstad, T. G."
Now showing items 1-6 of 6
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Charge retention in quantized energy levels of nanocrystals
Dâna, A.; Akça, I.; Ergun, O.; Aydınlı, Atilla; Turan, R.; Finstad, T. G. (Elsevier B.V., 2007)Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon ... -
A figure of merit for optimization of nanocrystal flash memory design
Dâna, A.; Akca, I.; Aydınlı, Atilla; Turan, R.; Finstad, T. G. (2008)Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanocrystal flash memory depends critically on the choice of nanocrystal size and density as well as on the choice of tunnel ... -
Growth of Ge nanoparticles on SiO2 / Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films
Foss, S.; Finstad, T. G.; Dana, A.; Aydınlı, Atilla (Elsevier B.V., 2007)Multilayer germanosilicate (Ge:SiO2) films have been grown by plasma enhanced chemical vapor deposition. Each Ge:SiO2 layer is separated by a pure SiO2 layer. The samples were heat treated at 900 °C for 15 and 45 min. ... -
Matrix density effect on morphology of germanium nanocrystals embedded in silicon dioxide thin films
Alagoz, A. S.; Genisel, M. F.; Foss, Steinar; Finstad, T. G.; Turan, R. (Materials Research Society, 2011)Flash type electronic memories are the preferred format in code storage at complex programs running on fast processors and larger media files in portable electronics due to fast write/read operations, long rewrite life, ... -
Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers
Dana, Aykutlu; Aǧan, S.; Tokay, S.; Aydınlı, Atilla; Finstad, T. G. (Wiley, 2007)Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ... -
Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO 2 using parametric models
Basa, P.; Petrik, P.; Fried, M.; Dâna, Aykutlu; Aydınlı, Atilla; Foss, S.; Finstad, T. G. (Wiley, 2008-05)Ge-rich SiO2 layers on top of Si substrates were deposited using plasma enhanced chemical vapour deposition. Ge nanocrystals embedded in the SiO2 layers were formed by high temperature annealing. The samples were measured ...