Now showing items 1-7 of 7

    • Electrically-reconfigurable integrated photonic switches 

      Fidaner, O.; Demir, Hilmi Volkan; Sabnis V.A.; Harris Jr. J.S.; Miller, D.A.B.; Zheng J.-F. (IEEE, 2004)
      We report remotely electrically reconfigurable photonic switches that intimately integrate waveguide electroabsorption modulators with surface-normal photodiodes, avoiding conventional electronics. These switches exhibit ...
    • Integrated photonic switches for nanosecond packet-switched optical wavelength conversion 

      Fidaner, O.; Demir, Hilmi Volkan; Sabnis, V. A.; Zheng, J. F.; Harris, J. S.; Miller, D. A. B. (Optical Society of America, 2006)
      We present a multifunctional photonic switch that monolithically integrates an InGaAsP/InP quantum well electroabsorption modulator and an InGaAs photodiode as a part of an on-chip, InP optoelectronic circuit. The optical ...
    • Intimate monolithic integration of chip-scale photonic circuits 

      Sabnis, V. A.; Demir, Hilmi Volkan; Fidaner, O.; Zheng, J.-F.; Harris, J. S.; Miller, D. A. B.; Li, N.; Wu, T.-C.; Chen, H.-T.; Houng, Y.-M. (IEEE, 2005)
      In this paper, we introduce a robust monolithic integration technique for fabricating photonic integrated circuits comprising optoelectronic devices (e.g., surface-illuminated photodetectors, waveguide quantum-well modulators, ...
    • Multifunctional integrated photonic switches 

      Demir, H. M.; Sabnis, V. A.; Fidaner, O.; Zheng, J.-F.; Harris, J. S.; Miller, D. A. B. (Institute of Electrical and Electronics Engineers, 2005)
      Traditional optical-electronic-optical (o-e-o) conversion in today’s optical networks requires cascading separately packaged electronic and optoelectronic chips and propagating high-speed electrical signals through and ...
    • Scalable wavelength-converting crossbar switches 

      Demir, Hilmi Volkan; Sabnis, V. A.; Zheng, J. F.; Fidaner, O.; Harris, J. S.; Miller, D. A. B. (IEEE, 2004-10)
      We report scalable low-power wavelength-converting Crossbar switches that monolithically integrate two-dimensional compact arrays of surface-normal photodiodes with quantum-well waveguide modulators. We demonstrate ...
    • Self-aligned via and trench for metal contact in III-V semiconductor devices 

      Zheng, J. F.; Demir, Hilmi Volkan; Sabnis, V.A.; Fidaner, O.; Harris, J.S.; Miller, D. A. B. (AIP Publishing LLC, 2006)
      A semiconductor processing method for the formation of self-aligned via and trench structures in III-V semiconductor devices (in particular, on InP platform) is presented, together with fabrication results. As a template ...
    • Self-aligning planarization and passivation for integration applications in III-V semiconductor devices 

      Demir, Hilmi Volkan; Zheng, J.-F.; Sabnis, V. A.; Fidaner, O.; Hanberg, J.; Harris, J. S.; Miller, D. A. B. (IEEE, 2005)
      This paper reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage ...