Now showing items 1-11 of 11

    • Effect of exchange-correlation potential on the plasmon dispersions in a doped symmetrical double quantum well 

      Tüzemen, E. Ş.; Turkoglu, A.; Ergun, Y.; Sokmen, I.; Tanatar, Bilal (Wiley - V C H Verlag GmbH & Co. KGaA, 2007)
      We have calculated the plasmon dispersion relations in a doped double quantum well with and without exchange-correlation potential added to the effective potential of the system. The calculations were done for high and low ...
    • Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Salihoglu, Ö.; Aydınlı, Atilla; Aslan, B.; Arikan, B.; Kilinc, M. C.; Ergun, Y.; Serincan, U.; Turan, R. (IEEE, 2012)
      The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ...
    • Electrical performance of InAs/AlSb/GaSb superlattice photodetectors 

      Tansel, T.; Hostut M.; Elagoz, S.; Kilic A.; Ergun, Y.; Aydınlı, Atilla (Academic Press, 2016)
      Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ...
    • Electronic and optical properties of 4.2 lm‘‘N’’ structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydınlı, Atilla (Elsevier B.V., 2013-01-05)
      We report on the development of a new structure for type II superlattice photodiodes that we call the ‘‘N’’ design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The ...
    • Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydınlı, Atilla (Elsevier, 2013)
      We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ...
    • Gibbs free energy assisted passivation layers 

      Salihoğlu, Ömer; Tansel, T.; Hoştut, M.; Ergun, Y.; Aydınlı, Atilla (SPIE, 2016)
      Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ...
    • High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers 

      Ergun, Y.; Hostut, M.; Tansel, T.; Muti, bdullah; Kilic, A.; Turan, R.; Aydınlı, Atilla (SPIE, 2013)
      We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ...
    • Low dark current N structure superlattice MWIR photodetectors 

      Salihoğlu, O.; Muti, Abdullah; Turan, R.; Ergun, Y.; Aydınlı, Atilla (SPIE, 2014)
      Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R0A) which is directly related to dark current of the detector. Dark current arises ...
    • N structure for type-II superlattice photodetectors 

      Salihoglu, O.; Muti, A.; Kutluer, K.; Tansel, T.; Turan, R.; Ergun, Y.; Aydınlı, Atilla (American Institute of Physics, 2012-08-14)
      In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption ...
    • N-structure based on InAs/AlSb/GaSb superlattice photodetectors 

      Hostut, M.; Alyoruk, M.; Tansel, T.; Kilic, A.; Turan, R.; Aydınlı, Atilla; Ergun, Y. (Academic Press, 2015)
      We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies ...
    • Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range 

      Kaya, U.; Hostut, M.; Kilic, A.; Sakiroglu, S.; Sokmen I.; Ergun, Y.; Aydınlı, Atilla (2013)
      In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n detector. Kronig-Penney and envelope function approximation is used to calculate band gap energy and superlattice minibands. ...