Browsing by Author "El-Atab, N."
Now showing items 1-14 of 14
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2-nm laser-synthesized Si nanoparticles for low-power charge trapping memory devices
(IEEE, 2014-08)In this work, the effect of embedding Silicon Nanoparticles (Si-NPs) in ZnO based charge trapping memory devices is studied. Si-NPs are fabricated by laser ablation of a silicon wafer in deionized water followed by sonication ... -
∼3-nm ZnO nanoislands deposition and application in charge trapping memory grown by single ALD step
(Nature Publishing Group, 2016)Low-dimensional semiconductor nanostructures are of great interest in high performance electronic and photonic devices. ZnO is considered to be a multifunctional material due to its unique properties with potential in ... -
Charge Trapping Memory with 2.85-nm Si-Nanoparticles Embedded in HfO2
(ECS, 2015-05)In this work, the effect of embedding 2.85-nm Si-nanoparticles charge trapping layer in between double layers of high-κ Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> oxides is studied. Using high frequency (1 MHz) ... -
Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices
(Institute of Physics Publishing Ltd., 2017)The manipulation of matter at the nanoscale enables the generation of properties in a material that would otherwise be challenging or impossible to realize in the bulk state. Here, we demonstrate growth of zirconia ... -
Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
(AIP Publishing, 2013)A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) ... -
Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer
(AIP Publishing, 2014)In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al2O3 layers are ... -
Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide
(Springer New York LLC, 2015)In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the ... -
Graphene Nanoplatelets Embedded in HfO2 for MOS Memory
(Electrochemical Society Inc., 2015)In this work, a MOS memory with graphene nanoplatelets charge trapping layer and a double layer high-κ Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> tunnel oxide is demonstrated. Using C-V<inf>gate</inf> measurements, the ... -
Growth of ∼3-nm ZnO nano-islands using Atomic layer deposition
(IEEE, 2016)In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force ... -
Low power Zinc-Oxide based charge trapping memory with embedded silicon nanoparticles
(ECS, 2014)In this work, a bottom-gate charge trapping memory device with Zinc-Oxide (ZnO) channel and 2-nm Si nanoparticles (Si-NPs) embedded in ZnO charge trapping layer is demonstrated. The active layers of the memory device are ... -
Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission
(2014)A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The charge trapping layer is formed by spin coating 2 nm silicon nanoparticles between Atomic Layer Deposited ... -
Memory effect by charging of ultra‐small 2‐nm laser‐synthesized solution processable Si‐nanoparticles embedded in Si–Al2O3–SiO2 structure
(Wiley-VCH Verlag, 2015)A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic layer deposited high-κ dielectric Al<inf>2</inf>O<inf>3</inf> layer ... -
Silicon nanoparticle charge trapping memory cell
(Wiley-VCH Verlag, 2014)A charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al2O3 which acts as the gate, blocking and ... -
Two-nanometer laser synthesized Si-nanoparticles for low power memory applications
(Springer International Publishing, 2016)Current flash memory devices are expected to face two major challenges in the near future: density and voltage scaling. The density of the memory is related to the gate length scaling which is constrained by the gate stack, ...
