Browsing by Author "El-Atab, N."
Now showing items 1-14 of 14
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2-nm laser-synthesized Si nanoparticles for low-power charge trapping memory devices
El-Atab, N.; Özcan, Ayşe; Alkış, Sabri; Okyay, Ali Kemal; Nayfeh, A. (IEEE, 2014-08)In this work, the effect of embedding Silicon Nanoparticles (Si-NPs) in ZnO based charge trapping memory devices is studied. Si-NPs are fabricated by laser ablation of a silicon wafer in deionized water followed by sonication ... -
∼3-nm ZnO nanoislands deposition and application in charge trapping memory grown by single ALD step
El-Atab, N.; Chowdhury F.; Ulusoy, T. G.; Ghobadi, A.; Nazirzadeh A.; Okyay, Ali Kemal; Nayfeh, A. (Nature Publishing Group, 2016)Low-dimensional semiconductor nanostructures are of great interest in high performance electronic and photonic devices. ZnO is considered to be a multifunctional material due to its unique properties with potential in ... -
Charge Trapping Memory with 2.85-nm Si-Nanoparticles Embedded in HfO2
El-Atab, N.; Turgut, Berk Berkan; Okyay, Ali Kemal; Nayfeh, A. (ECS, 2015-05)In this work, the effect of embedding 2.85-nm Si-nanoparticles charge trapping layer in between double layers of high-κ Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> oxides is studied. Using high frequency (1 MHz) ... -
Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices
El-Atab, N.; Ulusoy, T. G.; Ghobadi, A.; Suh, J.; Islam, R.; Okyay, Ali Kemal; Saraswat, K.; Nayfeh, A. (Institute of Physics Publishing Ltd., 2017)The manipulation of matter at the nanoscale enables the generation of properties in a material that would otherwise be challenging or impossible to realize in the bulk state. Here, we demonstrate growth of zirconia ... -
Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
El-Atab, N.; Alqatari, S.; Oruc F.B.; Souier, T.; Chiesa, M.; Okyay, Ali Kemal; Nayfeh, A. (AIP Publishing, 2013)A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) ... -
Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer
El-Atab, N.; Cimen, F.; Alkis, S.; Ortac, B.; Alevli, M.; Dietz, N.; Okyay, Ali Kemal; Nayfeh, A. (AIP Publishing, 2014)In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al2O3 layers are ... -
Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide
El-Atab, N.; Turgut, B. B.; Okyay, Ali Kemal; Nayfeh, M.; Nayfeh, A. (Springer New York LLC, 2015)In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the ... -
Graphene Nanoplatelets Embedded in HfO2 for MOS Memory
El-Atab, N.; Turgut, Berk Berkan; Okyay, Ali Kemal; Nayfeh, A. (Electrochemical Society Inc., 2015)In this work, a MOS memory with graphene nanoplatelets charge trapping layer and a double layer high-κ Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> tunnel oxide is demonstrated. Using C-V<inf>gate</inf> measurements, the ... -
Growth of ∼3-nm ZnO nano-islands using Atomic layer deposition
El-Atab, N.; Chowdhury, F. I.; Ulusoy, Türkan Gamze; Ghobadi, Amir; Nazirzadeh, Amin; Okyay, Ali Kemal; Nayfeh, A. (IEEE, 2016)In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force ... -
Low power Zinc-Oxide based charge trapping memory with embedded silicon nanoparticles
Nayfeh, A.; Okyay, Ali Kemal; El-Atab, N.; Özcan, Ayşe; Alkış, Sabri (ECS, 2014)In this work, a bottom-gate charge trapping memory device with Zinc-Oxide (ZnO) channel and 2-nm Si nanoparticles (Si-NPs) embedded in ZnO charge trapping layer is demonstrated. The active layers of the memory device are ... -
Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission
El-Atab, N.; Ozcan, A.; Alkis, S.; Okyay, Ali Kemal; Nayfeh, A. (2014)A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The charge trapping layer is formed by spin coating 2 nm silicon nanoparticles between Atomic Layer Deposited ... -
Memory effect by charging of ultra‐small 2‐nm laser‐synthesized solution processable Si‐nanoparticles embedded in Si–Al2O3–SiO2 structure
El-Atab, N.; Rizk, A.; Tekcan, B.; Alkis, S.; Okyay, Ali Kemal; Nayfeh, A. (Wiley-VCH Verlag, 2015)A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic layer deposited high-κ dielectric Al<inf>2</inf>O<inf>3</inf> layer ... -
Silicon nanoparticle charge trapping memory cell
El-Atab, N.; Ozcan, A.; Alkis, S.; Okyay, Ali Kemal; Nayfeh, A. (Wiley-VCH Verlag, 2014)A charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al2O3 which acts as the gate, blocking and ... -
Two-nanometer laser synthesized Si-nanoparticles for low power memory applications
El-Atab, N.; Okyay, Ali Kemal; Nayfeh, A. (Springer International Publishing, 2016)Current flash memory devices are expected to face two major challenges in the near future: density and voltage scaling. The density of the memory is related to the gate length scaling which is constrained by the gate stack, ...