Browsing by Author "Donmez, I."
Now showing items 1-19 of 19
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Atomic layer deposition of GaN at low temperatures
(A I P Publishing LLC, 2012)The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH 3) as the ... -
Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
(A I P Publishing LLC, 2015)Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the ... -
Effect of film thickness on the electrical properties of AlN films prepared by plasma-enhanced atomic layer deposition
(Institute of Electrical and Electronics Engineers Inc., 2015)In this paper, AlN thin films with two different thicknesses, i.e., 7 and 47 nm, were deposited at 200 °C on p-type Si substrates by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia. To investigate ... -
Effect of post-deposition annealing on the electrical properties of B-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
(American Vacuum Society, 2014-08)Ga2O3 dielectric thin films were deposited on (111)-oriented p-type silicon wafers by plasma-enhanced atomic layer deposition using trimethylgallium and oxygen plasma. Structural analysis of the Ga 2O3 thin films was carried ... -
Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition
(Wiley - V C H Verlag GmbH & Co. KGaA, 2015)The influences of reactor pressure on the stoichiometry, free carrier concentration, IR and Hall determined mobility, effective optical band edge, and optical phonon modes of HPCVD grown InN films have been analysed and ... -
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
(Elsevier, 2014)In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed ... -
Fabrication of hafnia hollow nanofibers by atomic layer deposition using electrospun nanofiber templates
(Elsevier, 2013)Hafnia (HfO2) hollow nanofibers (HNs) were synthesized by atomic layer deposition (ALD) using electrospun nylon 6,6 nanofibers as templates. HfO2 layers were deposited on polymeric nanofibers at 200 °C by alternating ... -
The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
(2011)The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum as metal source has been studied. The -2Θ grazing-incidence ... -
Low - temperature self - limiting growth of III - nitride thin films by plasma - enhanced atomic layer deposition
(American Scientific Publishers, 2012)We report on the low-temperature self-limiting growth and characterization of III-Nitride thin films. AlN and GaN films were deposited by plasma-enhanced atomic layer deposition (PEALD) on various substrates using ... -
Low temperature atomic layer deposited ZnO photo thin film transistors
(AVS Science and Technology Society, 2014)ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250°C. Material characteristics ... -
Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
(A I P Publishing, 2013)Gallium oxide (Ga2O3) thin films were deposited by plasma-enhanced atomic layer deposition (ALD) using trimethylgallium as the gallium precursor and oxygen plasma as the oxidant. A wide ALD temperature window was observed ... -
Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
(A I P Publishing LLC, 2012)Crystalline aluminum nitride (AlN) films have been prepared by plasma enhanced atomic layer deposition within the temperature range of 100 and 500 °C. The AlN films were characterized by x-ray diffraction, spectroscopic ... -
Polymer-inorganic core-shell nanofibers by electrospinning and atomic layer deposition: Flexible nylon-ZnO core-shell nanofiber mats and their photocatalytic activity
(American Chemical Society, 2012)Polymer-inorganic core-shell nanofibers were produced by two-step approach; electrospinning and atomic layer deposition (ALD). First, nylon 6,6 (polymeric core) nanofibers were obtained by electrospinning, and then zinc ... -
Role of zinc interstitials and oxygen vacancies of ZnO in photocatalysis: a bottom-up approach to control the defect density
(Royal Society of Chemistry, 2014-06-09)Oxygen vacancies (VOs) in ZnO are well-known to enhance photocatalytic activity (PCA) despite various other intrinsic crystal defects. In this study, we aim to elucidate the effect of zinc interstitials (Zn i) and VOs on ... -
Selective isolation of the electron or hole in photocatalysis: ZnO–TiO2 and TiO2–ZnO core–shell structured heterojunction nanofibers via electrospinning and atomic layer deposition
(Royal Society of Chemistry, 2014-02-06)Heterojunctions are a well-studied material combination in photocatalysis studies, the majority of which aim to improve the efficacy of the catalysts. Developing novel catalysts begs the question of which photo-generated ... -
Structural properties of AIN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
(Wiley, 2012)Crystalline aluminum nitride (AlN) films have been prepared by plasma-enhanced atomic layer deposition (PEALD) within the temperature range from 100 to 500 °C. A self-limiting, constant growth rate per cycle temperature ... -
Template-based synthesis of aluminum nitride hollow nanofibers via plasma-enhanced atomic layer deposition
(Wiley, 2013)Aluminum nitride (AlN) hollow nanofibers were synthesized via plasma-enhanced atomic layer deposition using sacrificial electrospun polymeric nanofiber templates having different average fiber diameters (~70, ~330, and ... -
Transformation of polymer-ZnO core-shell nanofibers into ZnO hollow nanofibers: Intrinsic defect reorganization in ZnO and its influence on the photocatalysis
(Elsevier, 2015)Photocatalytic activity (PCA) on semiconductors is known to be majorly influenced by specific surface area and intrinsic lattice defects of the catalyst. In this report, we tested the efficiencies of 1D ZnO catalysts of ...
