Browsing by Author "Bulutay, Ceyhun"
Now showing items 1-17 of 17
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Atomistic structure simulation of silicon nanocrystals driven with suboxide penalty energies
(American Scientific Publishers, 2008)The structural control of silicon nanocrystals embedded in amorphous oxide is currently an important technological problem. In this work, an approach is presented to simulate the structural behavior of silicon nanocrystals ... -
Carrier-induced refractive index change in InN
(Wiley, 2008)Rapid development of InN technology demands comprehensive assessment of the electronic and optoelectronic potential of this material. In this theoretical work the effect of free electrons on the optical properties of the ... -
Cat-state generation and stabilization for a nuclear spin through electric quadrupole interaction
(American Physical Society, 2017)Spin cat states are superpositions of two or more coherent spin states (CSSs) that are distinctly separated over the Bloch sphere. Additionally, the nuclei with angular momenta greater than 1/2 possess a quadrupolar charge ... -
Defect states in monolayer hexagonal BN: A comparative DFT and DFT-1/2 study
(Elsevier, 2020)Hexagonal boron nitride (h-BN) acts like a semiconductor vacuum to point defects enabling stable and controllable spin states at room temperature which qualifies them for quantum technological applications. To characterize ... -
Electron ground state g factor in embedded InGaAs quantum dots: an atomistic study
(American Physical Society, 2021-03-03)We present atomistic computations within an empirical pseudopotential framework for the electron s-shell ground state g tensor of InGaAs quantum dots (QDs) embedded to host matrices that grant electronic confinement. A ... -
Elements of nanocrystal high-field carrier transport modeling
(Wiley, 2007)Embedded semiconductor nanocrystals (NCs) within wide bandgap oxide materials are being considered for light emission and solar cell applications. One of the fundamental issues is the high-field transport in NCs. This ... -
Experimental and theoretical investigations of electronic and atomic structure of Si-nanocrystals formed in sapphire by ion implantation
(IOP, 2008)The semiconductor nanocomposites based on Si nanocrystals in dielectric matrices attract a great amount of attention due to their ability for luminescence in visible and near-IR part of the electromagnetic spectrum. Si ... -
Geometric band properties in strained monolayer transition metal dichalcogenides using simple band structures
(American Institute of Physics, 2019)Monolayer transition metal dichalcogenides (TMDs) bare large Berry curvature hotspots readily exploitable for geometric band effects. Tailoring and enhancement of these features via strain is an active research direction. ... -
Gunn oscillations in GaN channels
(IOP, 2004)Gallium nitride with its high negative differential mobility threshold is an appealing material for high power millimetre-wave oscillators as a Gunn diode. By means of extensive ensemble Monte Carlo simulations, the dynamics ... -
Harmonic enhancement of Gunn oscillations in GaN
(American Institute of Physics, 2005)High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeter-wave Gunn ... -
High-energy electron relaxation and full-band electron dynamics in aluminium nitride
(Elsevier, 2002)Material properties of AlN, particularly its wide band gap around 6 eV, warrant its operation in the high-field transport regimes reaching MV/cm fields. In this theoretical work, we examine the full-band scattering of ... -
k · p Parametrization and linear and circular dichroism in strained monolayer (janus) transition metal dichalcogenides from first-principles
(American Chemical Society, 2021-04-08)Semiconductor monolayer transition metal dichalcogenides (TMDs) have brought a new paradigm by introducing optically addressable valley degree of freedom. Concomitantly, their high flexibility constitutes a unique platform ... -
Loschmidt echo driven by hyperfine and electric-quadrupole interactions in nanoscale nuclear spin baths
(American Physical Society, 2018)The nuclear spin bath (NSB) dynamics and its quantum control are of importance for the storage and processing of quantum information within a semiconductor environment. In the presence of a carrier spin, primarily it is ... -
Physica Status Solidi (C) Current Topics in Solid State Physics: Preface
(2008)[No abstract available] -
Pseudopotential-based full zone k · p technique for indirect bandgap semiconductors: Si, Ge, diamond and SiC
(TÜBİTAK, 2006)The k · p is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands into consideration. ... -
Static synthetic gauge field control of double optomechanically induced transparency in a closed-contour interaction scheme
(American Physical Society, 2021-09-07)We study theoretically an optical cavity and a parity-time (PT)-symmetric pair of mechanical resonators, where all oscillators are pairwise coupled, forming an optomechanical system with a closed-contour interaction. Due ... -
Strain dependence of photoluminescence and circular dichroism in transition metal dichalcogenides: a k. p analysis
(OSA - The Optical Society, 2018)Within a two-band k p method we analyze different types of strain for the k valley optical characteristics of a freestanding monolayer mos2 Mose2 Ws2 andwse2. we predict that circular polarization selectivity for energies ...
