Browsing by Author "Balkan, N."
Now showing items 1-8 of 8
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Energy relaxation of electrons in InGaN quantum wells
(Springer New York LLC, 2015-04)In this study, electron energy relaxation mechanisms in HEMT structures with different InxGa1−xN-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at ... -
Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method
(Springer, 2009-12-03)The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities ... -
Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
(AIP Publishing LLC, 2009)This work describes Shubnikov-de Haas (SdH) measurements in Al0.22 Ga0.78 N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a ... -
The operation of a novel hot electron vertical cavity surface emitting laser
(SPIE, 1998)The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga 1-xAlxAs p- n ... -
Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method
(American Institute of Physics, 2010-07-15)We carried out the temperature (22-350 K) and magnetic field (0.05 and 1.4 T) dependent Hall mobility and carrier density measurements on Al 0.22Ga0.78N/GaN heterostructures with AlN interlayer grown by metal-organic ... -
A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs
(ELSEVIER, 2008-07-14)We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron ... -
The static and dynamic screening of power loss of a two-dimensional electron gas
(Academic Press, 1998)Experimental results concerning the well-width dependence of the acoustic-phonon-assisted energy relaxation of a two-dimensional electron gas in GaAs/Ga1-xAlxAs quantum-well structures are compared with theoretical models ... -
Super-radiant surface emission from a quasi-cavity hot electron light emitter
(Springer New York LLC, 1999)The Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure (HELLISH-1) device is a novel surface emitter which utilises hot carrier transport parallel to the layers of a Ga1 - xAlxAs p-n junction incorporating ...
