Browsing by Author "Arslan, E."
Now showing items 1-20 of 37
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Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD
(Springer New York LLC, 2017)High-resistive GaN (>108 Ω cm) layers have been grown with different buffer structures on 6H-SiC substrate using metalorganic chemical vapor deposition reactor. Different combination of the GaN/AlN super lattice, low ... -
Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD
(Institute of Physics Publishing Ltd., 2008)We report the growth of GaN films on the Si(1 1 1) substrate by metalorganic chemical vapour phase deposition (MOCVD). Different buffer layers were used to investigate their effects on the structural and optical properties ... -
Chondrogenic differentiation of mesenchymal stem cells on glycosaminoglycan-mimetic peptide nanofibers
(American Chemical Society, 2016)Glycosaminoglycans (GAGs) are important extracellular matrix components of cartilage tissue and provide biological signals to stem cells and chondrocytes for development and functional regeneration of cartilage. Among their ... -
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures
(AIP Publishing LLC, 2009-01-07)The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic chemical vapor ... -
Complementary and alternative technique for the determination of electron effective mass: Quantum hall effect
(Taylor & Francis Inc., 2016)The quantum Hall effect measurements in the AlInN/AlN/GaN heterostructure are studied in the temperature range from 1.8 K to 14 K and a magnetic field up to 11 T. The quantized two-dimensional electron gas was placed at ... -
Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes
(Elsevier, 2010-10-13)The current transport mechanisms in (Ni/Au)-AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current-voltage characteristics in the temperature range of 80-380 K. In order to determine the true current ... -
Current-Transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
(Elsevier, 2013)Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport ... -
Discolation-governed current-transport mechanism in (Ni/Au)-AlGaN/AIN/GaN heterostructures
(A I P Publishing LLC, 2009-01-22)The current-transport mechanisms in (Ni/Au)-Al(0,22)Ga(0,78)N/AlN/GaN heterostructures were studied by using temperature dependent forward-bias current-voltage (I-V) characteristics in the temperature range of 80-410 K. ... -
Double subband occupation of the two-dimensional electron gas in InxAl1-XN/AlN/GaN/AlN heterostructures with a low indium content (0.064 ≤ x ≤ 0.140) barrier
(Elsevier, 2010-05-08)We present a carrier transport study on low indium content (0.064 ≤ x ≤ 0.140) InxAl1 - xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33-300 K) and a magnetic field ... -
The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure
(Elsevier BV, 2014-01-31)One AlInN/AlN/GaN single channel heterostructure sample and four AlInN/AlN/GaN/AlN/GaN double channel heterostructure samples with different values of the second GaN layer were studied. The interface profiles, crystalline ... -
The effect of Si(x)N(y) interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD
(ELSEVIER, 2008-04-27)In the present paper, the effects of nitridation on the quality of GaN epitaxial films grown on Si(111) substrates by metal-organic chemical vapor phase deposition (MOCVD) are discussed. A series of GaN layers were grown ... -
Effective mass of electron in monolayer graphene: Electron-phonon interaction
(AIP Publishing LLC, 2013-01-25)Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic ... -
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
(ELSEVIER, 2010)The forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer ... -
The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers
(ELSEVIER, 2009-10-12)The effect of the in situ substrate nitridation time on the electrical, structural and optical properties of GaN films grown on Si(111) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. A thin ... -
Energy relaxation rates in AlInN/AlN/GaN heterostructures
(Springer, 2012-06-27)The two-dimensional (2D) electron energy relaxation in Al0.83In0.17N/AlN/GaN heterostructures has been investigated experimentally. Shubnikov-de Haas (SdH) effect measurements were employed in the investigations. The ... -
Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate
(Springer, 2013-08-08)The InxGa1-xN epitaxial layers, with indium (x) concentration changes between 0.16 and 1.00 (InN), were grown on GaN template/(0001) Al2O3 substrate by metal organic chemical vapour deposition. The indium content (x), ... -
Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure
(Elsevier BV, 2014-09)Hall effect measurements of a graphene-on-SiC system were carried out as a function of temperature (1.8-200 K) at a static magnetic field (0.51) With the analysis of temperature dependent single-field Hall data with the ... -
Forward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature range
(Elsevier, 2012-07-27)The current-transport mechanisms of the Pt contacts on p-InGaN and n-InGaN were investigated in a wide temperature range (80-360 K) and in the forward bias regime. It was found that the ideality factor (n) values and ... -
Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures
(Elsevier, 2010)The dielectric properties and AC electrical conductivity (σ ac)of the (Ni/Au)/Al 0.22Ga 0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage ... -
Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy
(AVS Science and Technology Society, 2018)The current-conduction mechanisms of the as-deposited and annealed at 450 °C (Ni/Pt) Schottky contacts on AlInGaN quaternary alloy have been investigated in the temperature range of 80-320 K. The zero-bias barrier height ...
