Browsing by Author "Ardali, S."
Now showing items 1-7 of 7
-
Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate
(Elsevier, 2021-01-27)The electron mobility limited by different scattering mechanisms in the quaternary AlInGaN alloy grown on a GaN layer is investigated with the classical Hall measurement, which is performed at a temperature range of 12 and ... -
Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs
(2011)Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained ... -
Determination of the LO phonon energy by using electronic and optical methods in AIGaN/GaN
(Springer, 2012)The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect ... -
Effective mass of electron in monolayer graphene: Electron-phonon interaction
(AIP Publishing LLC, 2013-01-25)Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic ... -
Energy relaxation rates in AlInN/AlN/GaN heterostructures
(Springer, 2012-06-27)The two-dimensional (2D) electron energy relaxation in Al0.83In0.17N/AlN/GaN heterostructures has been investigated experimentally. Shubnikov-de Haas (SdH) effect measurements were employed in the investigations. The ... -
Substrate effects on electrical parameters of Dirac fermions in graphene
(Elsevier, 2021-05-19)The substrate effects on the electronic transport properties of single-layer graphene on TiO2/Si substrate have been studied. The Hall mobility, sheet carrier density, and transport lifetime were obtained from the ... -
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
(2012)The two-dimensional (2D) electron energy relaxation in Al 0.25Ga 0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ...
