Browsing by Author "Alevli, M."
Now showing items 1-16 of 16
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Atomic layer deposition of GaN at low temperatures
(A I P Publishing LLC, 2012)The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH 3) as the ... -
Comparison of trimethylgallium and triethylgallium as "ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2016-02)GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used ... -
Corrigendum: Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles (2015 J. Opt. 17 105903)
(IOP, 2019)In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements ... -
Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition
(Wiley - V C H Verlag GmbH & Co. KGaA, 2015)The influences of reactor pressure on the stoichiometry, free carrier concentration, IR and Hall determined mobility, effective optical band edge, and optical phonon modes of HPCVD grown InN films have been analysed and ... -
Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
(IEEE, 2016)GaN thin films grown by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) at two different substrate temperatures (250 and 450 °C) are compared. Effect of two different Ga source materials named as ... -
Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer
(AIP Publishing, 2014)In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al2O3 layers are ... -
Enhancement in c-Si solar cells using 16 nm InN nanoparticles
(IOP Publishing, 2016-05)In this work, 16 nm indium nitride (InN) nanoparticles (NPs) are used to increase the performance of thin-film c-Si HIT solar cells. InN NPs were spin-coated on top of an ITO layer of c-Si HIT solar cells. The c-Si HIT ... -
Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles
(Institute of Physics Publishing Ltd., 2015)In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements ... -
Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film
(Springer, 2012-07-27)We report the synthesis of colloidal InN nanocrystals (InN-NCs) in organic solution through nanosecond pulsed laser ablation of high pressure chemical vapor deposition-grown InN thin film on GaN/sapphire template substrate. ... -
The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
(2011)The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum as metal source has been studied. The -2Θ grazing-incidence ... -
A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation
(IEEE, 2014)We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical ... -
Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
(A I P Publishing LLC, 2012)Crystalline aluminum nitride (AlN) films have been prepared by plasma enhanced atomic layer deposition within the temperature range of 100 and 500 °C. The AlN films were characterized by x-ray diffraction, spectroscopic ... -
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
(2012)We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ... -
Structural properties of AIN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
(Wiley, 2012)Crystalline aluminum nitride (AlN) films have been prepared by plasma-enhanced atomic layer deposition (PEALD) within the temperature range from 100 to 500 °C. A self-limiting, constant growth rate per cycle temperature ... -
Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
(AIP Publishing LLC, 2016-02)Gallium nitride films were grown by hollow cathode plasma-assisted atomic layer deposition using triethylgallium and N2/H2 plasma. An optimized recipe for GaN film was developed, and the effect of substrate temperature was ...
