Browsing by Author "Şen, Özlem"
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Effects of field plate on the maximum temperature and temperature distribution for gan HEMT devices
Kara D.; Donmezer N.; Canan, Talha Furkan; Şen, Özlem; Özbay, Ekmel (American Society of Mechanical Engineers, 2016)Field plated GaN high electron mobility transistors (HEMTs) are widely preferred amongst other GaN HEMT devices because of their ability to regulate electric field at high power densities. When operated at high power ... -
High power K-band GaN on SiC CPW monolithic power amplifier
Cengiz, Ömer; Şen, Özlem; Özbay, Ekmel (IEEE, 2014-10)This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain ... -
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance
Bosi G.; Raffo A.; Vadalà V.; Trevisan F.; Vannini G.; Cengiz, Ömer; Şen, Özlem; Özbay, Ekmel (IEEE, 2016)In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the ... -
X Band GaN Based MMIC power amplifier with 36.5dBm P1-dB for space applications
Gürdal, Armağan; Yilmaz, Burak Alptug; Cengiz, Ömer; Şen, Özlem; Özbay, Ekmel (IEEE, 2018)An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AIGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is ...