Browsing by Author "Şafak, Y."
Now showing items 1-6 of 6
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Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes
(Elsevier, 2010-10-13)The current transport mechanisms in (Ni/Au)-AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current-voltage characteristics in the temperature range of 80-380 K. In order to determine the true current ... -
The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures
(Wiley, 2010)(Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias ... -
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
(ELSEVIER, 2010)The forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer ... -
Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures
(Elsevier, 2010)The dielectric properties and AC electrical conductivity (σ ac)of the (Ni/Au)/Al 0.22Ga 0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage ... -
Frequency dependent electrical characteristics of (Ni/Au)/AlGaN/AlN/GaN heterostructures
(Optoelectronica,National Institute of Research and Development for Optoelectronics, 2010)The main electrical parameters such as ideality factor (n), zero bias barrier height (Bo), series resistances (R s), depletion layer width (W D) and interface state densities (N SS) of (Ni/Au)/AlGaN/AlN/GaN heterostructures ... -
Temperature-dependent profile of the surface states and series resistance in (Ni/Au)/AIGaN/AIN/GaN heterostructures
(Wiley, 2010-03-28)The profile of the interface state densities(N ss) and series resistances (R s) effect on capacitance-voltage (C-V) and conductancevoltage (G/ω-V) of (Ni/Au)/Al xGa 1-xN/AIN/ GaN heterostructures as a function of the ...
