Browsing by Author "Öztürk, Mustafa"
Now showing items 1-9 of 9
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Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs
(Institute of Physics Publishing, 2018)This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 μm drain-to-source spacing, ... -
GaN based LNA MMICs for X-band applications
(Institute of Electrical and Electronics Engineers, 2020)In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been ... -
Investigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniques
(Institute of Electrical and Electronics Engineers Inc., 2019)A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch ... -
Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs
(IOP, 2019-07)In this paper, we report an angstrom-thick atomic layer deposited (ALD) aluminum oxide (Al2O3) dielectric passivation layer for an AlGaN/GaN high electron mobility transistor (HEMT). Our results show a 55% improvement in ... -
Nonalloyed ohmic contacts in AlGaN/GaN HEMTs with MOCVD regrowth of InGaN for Ka-band applications
(IEEE, 2021-01-22)Low-resistance ohmic contacts in AlGaN/GaN high-electron-mobility transistor (HEMT) devices require high-temperature (HT) annealing (>800 °C) which can deteriorate material quality, surface morphology, and edge acuity of ... -
Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment
(Elsevier, 2019)We demonstrate the electrical performances of an AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with low gate leakage current (Ig). A low gate leakage current as low as the order of ... -
Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates
(SPIE, 2019-02)A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer ... -
Scattering analysis of ultrathin barrier (<7 nm) GaN‑based heterostructures
(Springer, 2019)In this study, two-dimensional electron gas (2DEG) mobility analysis of AlN/GaN and InAlN/GaN structures with ultrathin barrier layers by metal organic chemical vapor deposition (MOCVD) has been performed with Hall efect ... -
Thermal annealing effects on the electrical and structural properties of Ni/Pt Schottky contacts on the quaternary AlInGaN epilayer
(Springer US, 2019)Pt/Au, Ni/Au, Ni/Pt/Au Schottky contacts were placed on a quaternary Al0.84In0.13Ga0.03N epilayer. The electrical and structural properties of the as-deposited Pt/Au, Ni/Au, Ni/Pt/Au and annealed Ni/Pt/Au Schottky contacts ...
