Browsing by Keywords "Temperature"
Now showing items 21-40 of 47
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Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures
(IEEE, 2015)Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of ... -
Initial stages of SiGe epitaxy on Si(001) studied by scanning tunneling microscopy
(Elsevier BV, 1995)We have studied the initial stages of strained SiGe alloy growth on the Si(001)-(2 × 1) surface by scanning tunneling microscopy. The Si0.36Ge0.64 alloy was grown on the silicon substrate at various coverages (0.13-3.6 ML) ... -
Low thermal-mass LEDs: Size effect and limits
(Optical Society of American (OSA), 2014)In this work, low thermal-mass LEDs (LTM-LEDs) were developed and demonstrated in flip-chip configuration, studying both experimentally and theoretically the enhanced electrical and optical characteristics and the limits. ... -
Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition
(Royal Society of Chemistry, 2015-08)Herein, we report on atomic layer deposition of ternary InxGa1−xN alloys with different indium contents using a remotely integrated hollow cathode plasma source. Depositions were carried out at 200 °C using organometallic ... -
Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
(Wiley - V C H Verlag GmbH & Co. KGaA, 2015)Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current ... -
Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
(American Institute of Physics Inc., 2016)In this work, we report on self-limiting growth of InN thin films at substrate temperatures as low as 200 °C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The precursors used in growth experiments ... -
Magnetic resonance electrical impedance tomography (MREIT) based on the solution of the convection equation using FEM with stabilization
(Institute of Physics Publishing, 2012-07-27)Most algorithms for magnetic resonance electrical impedance tomography (MREIT) concentrate on reconstructing the internal conductivity distribution of a conductive object from the Laplacian of only one component of the ... -
Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
(SPIE, 2014)Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are ... -
Methyldecalin hydrocracking over palladium/zeolite-X
(Elsevier Science Ltd, Exeter, United Kingdom, 2000)Hydrocracking of methyldecalin over Pd/REX has been studied with surface sensitive techniques in the critical temperature range 325– 3508C. Results from in situ characterization of adsorbed species, and post-reaction ... -
Modeling of electrodes and implantable pulse generator cases for the analysis of implant tip heating under MR imaging
(Wiley-Blackwell Publishing, Inc., 2015)Purpose: The authors purpose is to model the case of an implantable pulse generator (IPG) and the electrode of an active implantable medical device using lumped circuit elements in order to analyze their effect on radio ... -
Molecular entrapment of volatile organic compounds (VOCs) by electrospun cyclodextrin nanofibers
(Elsevier, 2016-02)In this paper, we reported the molecular entrapment performance of hydroxypropyl-beta-cyclodextrin (HPβCD) and hydroxypropyl-gamma-cyclodextrin (HPγCD) electrospun nanofibers (NF) for two common volatile organic compounds ... -
Multi-layered CdSe/ZnS/CdSe heteronanocrystals to generate and tune white light
(2008-11)In this study, tuneable white light generation by controlling CdSe/ZnS/CdSe core/shell/shell heteronanocrystals integrated on InGaN/GaN light emitting diodes was presented. These multilayered quantum dots, also known as ... -
Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures
(A I P Publishing LLC, 2007)In this work, the effects of N incorporation on the optical properties of GaAsSbN/GaAs single quantum wells (SQWs) have been investigated using temperature, excitation, and magnetic dependencies of photoluminescence (PL) ... -
Phonon-assisted exciton transfer into silicon using nanoemitters: the role of phonons and temperature effects in förster resonance energy transfer
(American Chemical Society, 2013)We study phonon-assisted Forster resonance energy transfer (FRET) into an indirect band-gap semiconductor using nanoemitters. The unusual temperature dependence of this energy transfer, which is measured using the donor ... -
Radiochemical study of Co2+ sorption on chlorite and kaolinite
(Akademiai Kiado Rt., 1999)In this work, the sorption behavior of Co(II) ions on natural chlorite and kaolinite as a function of time, concentration and temperature was studied. 60Co radiotracer method and the batch technique were used. The kinetic ... -
A radiotracer study of the adsorption behavior of aqueous Ba2+ ions on nanoparticles of zero-valent iron
(2007)Recently, iron nanoparticles are increasingly being tested as adsorbents for various types of organic and inorganic pollutants. In this study, nanoparticles of zero-valent iron (NZVI) synthesized under atmospheric conditions ... -
Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2016)Gallium nitride (GaN) thin films were grown on Si (100), Si (111), and c-plane sapphire substrates at 200 �C via hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) using GaEt3 and N2/H2 plasma as group-III ... -
Te covered Si(001): a variable surface reconstruction
(American Physical Society, 2001)At a given temperature, clean and adatom covered silicon surfaces usually exhibit well-defined reconstruction patterns. Our finite temperature ab initio molecular dynamics calculations show that the tellurium covered Si(001) ... -
Temperature dependence of the energy of a vortex in a two-dimensional Bose gas
(Elsevier, 2004)We evaluate the thermodynamic critical angular velocity Ωc(T) for creation of a vortex of lowest quantized angular momentum in a strictly two-dimensional Bose gas at temperature T, using a mean-field two-fluid model for ... -
Temperature-and excitation intensity-dependent photoluminescence in TlInSeS single crystals
(American Institute of Physics, 2002)Photoluminescence (PL) spectra of TlInSeS layered single crystals were investigated in the wavelength region 460-800 nm and in the temperature range 10-65 K. We observed one wide PL band centred at 584 nm (2.122 eV) at T ...
