Now showing items 21-28 of 28

    • High-speed solar-blind AlGaN Schottky photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Kartaloğlu, Tolga; Aytür, Orhan; Özbay, Ekmel (Cambridge University Press, 2003)
      We report high-speed solar-blind AlGaN-based Schottky photodiodes. AlGaN/GaN heterostructure device layers were grown on sapphire substrate. The devices were fabricated on AlGaN/GaN heterostructuresusing a microwave ...
    • High-speed transparent indium-tin-oxide based resonant cavity Schottky photodiode with Si/sub 3/N/sub 4//SiO/sub 2/ top Bragg mirror 

      Bıyıklı, Necmi; Kimukin, I.; Aytur, O.; Özbay, Ekmel; Gokkavas, M.; Unlu, S. (IEEE, Piscataway, NJ, United States, 2000)
      Photodetectors demonstrating high bandwidth-efficiency (BWE) products are required for high-performance optical communication and measurement systems. For conventional photodiodes the BWE product is limited due to the ...
    • ITO-schottky photodiodes for high-performance detection in the UV-IR spectrum 

      Bıyıklı, Necmi; Kimukin, I.; Butun, B.; Aytür, O.; Özbay, Ekmel (IEEE, 2004)
      High-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and quarternary III-V material systems (AlGaN-GaN, AlGaAs-GaAs, ...
    • On-chip characterization of THz Schottky diodes using non-contact probes 

      Khan, T. M.; Ghobadi, A.; Celik, O.; Caglayan, C.; Bıyıklı, Necmi; Okyay, Ali Kemal; Topalli, K.; Sertel, K. (IEEE Computer Society, 2016)
      We present non-contact characterization of GaAs Schottky contacts in the 140-220 GHz band. The non-contact probing technique utilizes planar on-chip antennas that are monolithically integrated with the coplanar waveguide ...
    • A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach 

      Ghobadi, Amir; Khan, Talha Masood; Celik, Ozan Onur; Biyikli, Necmi; Okyay, Ali Kemal; Topalli, Kagan (Cambridge University Press, 2017)
      In this paper, we present the electromagnetic modeling of a performance-enhanced planar Schottky diode for applications in terahertz (THz) frequencies. We provide a systematic simulation approach for analyzing our Schottky ...
    • Ta/Si Schottky diodes fabricated by magnetron sputtering technique 

      Ocak, Y.S.; Genisel, M.F.; Kiliçoǧlu, T. (2010)
      Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier ...
    • Ultra-low-cost near-infrared photodetectors on silicon 

      Nazirzadeh, M. Amin; Atar, Fatih B.; Turgut, B. Berkan; Okyay, Ali Kemal (SPIE, 2015-02)
      We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that ...
    • Ultrafast and highly efficient resonant cavity enhanced photodiodes 

      Özbay, Ekmel; Kimukin, İbrahim; Bıyıklı, Necmi (SPIE, 2003-09)
      In this talk, we will review our research efforts on resonant cavity enhanced (RCE) high-speed high-efficiency photodiodes (PDs) operating in the 1st and 3rd optical communication windows. Using a microwave compatible ...