Browsing by Keywords "Photodetectors"

Now showing items 21-40 of 69

    • High-performance 1.55 μm resonant cavity enhanced photodetector 

      Kimukin, İbrahim; Bıyıklı, Necmi; Özbay, Ekmel (IEEE, 2002)
      A high speed and high efficiency resonant cavity enhanced InGaAs based photodetector was demonstrated. A peak quantum efficiency of 66% was measured along with 31 GHz bandwidth with the device. The photoresponse was found ...

    • High-performance solar-blind AlGaN photodetectors 

      Özbay, Ekmel; Bıyıklı, Necmi; Kimukin, İbrahim; Tut, Turgut; Kartaloğlu, Tolga; Aytür, Orhan (IEEE, 2004)
      High-performance aluminum gallium nitride (AlGaN)-based solar-blind (SB) photodetectors were demonstrated using different device structures. The Al x-Ga1-xN layers structure were grown by metalorganic chemical vapor ...

    • High-performance solar-blind photodetectors based on AlxGa 1_xN heterostructures 

      Özbay, Ekmel; Bıyıklı, Necmi; Kimukin, I.; Kartaloglu, T.; Tut, T.; Aytür, O. (IEEE, 2004)
      Design, fabrication, and characterization of high-performance AI xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky. p-i-n, and metal-semicondnctor-metal ...

    • High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector 

      Kimukin, İbrahim; Özbay, Ekmel; Bıyıklı, Necmi; Kartaloğlu, Tolga; Aytür, Orhan; Tuttle, G. (IEEE, 2000)
      Resonant cavity enhanced (RCE) photodetectors offer the possibility of overcoming the low quantum efficiency limitation of conventional photodetectors. The RCE detectors are based on the enhancement of the optical field ...

    • High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p-i-n photodiodes 

      Butun, B.; Bıyıklı, Necmi; Kimukin, I.; Aytur, O.; Özbay, Ekmel; Postigo, P. A.; Silveira, J. P.; Alija, A. R. (American Institute of Physics, 2004)
      The 1.55 μm high-speed operation of GaAs-based p-i-n photodiodes was demonstrated and their design, growth and fabrication were discussed. A resonant-cavity-detector structure was used to selectively enhance the photoresponse ...

    • High-speed high-efficiency large-area resonant cavity enhanced p-i-n photodiodes for multimode fiber communications 

      Gökkavas, M.; Dosunmu, O.; Ünlü, M. S.; Ulu, G.; Mirin, R. P.; Christensen, D. H.; Özbay, Ekmel (IEEE, 2001)
      In this letter, we report AlGaAs–GaAs p-i-n photodiodes with a 3-dB bandwidth in excess of 10 GHz for devices as large as 60- m diameter. Resonant cavity enhanced photodetection is employed to improve quantum efficiency, ...

    • High-Speed InSb photodetectors on GaAs for mid-IR applications 

      Kimukin, I.; Bıyıklı, Necmi; Kartaloǧlu, T.; Aytür, O.; Özbay, Ekmel (IEEE, 2004)
      We report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06 × 10 -6 cm 2 to 2.25 × 10 -4 cm 2 measured at 77 K ...

    • High-speed resonant-cavity-enhanced Schottky photodiodes 

      Ata, Erhan P.; Bıyıklı, Necmi; Demirel, Ekrem; Özbay, Ekmel; Gökkavas, M.; Onat, B.; Ünlü, M. S.; Tuttle, G. (IEEE, 1998)
      The top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. Fabrication started with formation of ohmic contacts to n+ layers. Mesa isolation was followed by a ...

    • High-speed solar-blind AlGaN Schottky photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Kartaloğlu, Tolga; Aytür, Orhan; Özbay, Ekmel (Cambridge University Press, 2003)
      We report high-speed solar-blind AlGaN-based Schottky photodiodes. AlGaN/GaN heterostructure device layers were grown on sapphire substrate. The devices were fabricated on AlGaN/GaN heterostructuresusing a microwave ...

    • High-speed solar-blind AlGaN-based metal-semiconductor-metal photodetectors 

      Bıyıklı, Necmi; Kimukin, İbrahim; Kartaloğlu, Tolga; Aytür, Orhan; Özbay, Ekmel (Wiley, 2003)
      Solar-blind AlGaN metal-semiconductor-metal (MSM) photodetectors with fast pulse response have been demonstrated. The devices were fabricated on MOCVD-grown epitaxial Al0.38Ga0.62N layers, using a microwave compatible ...

    • High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts 

      Bıyıklı, Necmi; Kimukin, I.; Kartaloglu, T.; Aytur, O.; Özbay, Ekmel (American Institute of Physics, 2003)
      AlGaN/GaN-based high-speed solar-blind photodetectors were discussed. Current-voltage, spectral responsivity, and high-frequency response characterizations were performed. Breakdown voltages larger than 40 V were obtained. ...

    • High-speed transparent indium-tin-oxide based resonant cavity Schottky photodiode with Si/sub 3/N/sub 4//SiO/sub 2/ top Bragg mirror 

      Bıyıklı, Necmi; Kimukin, I.; Aytur, O.; Özbay, Ekmel; Gokkavas, M.; Unlu, S. (IEEE, Piscataway, NJ, United States, 2000)
      Photodetectors demonstrating high bandwidth-efficiency (BWE) products are required for high-performance optical communication and measurement systems. For conventional photodiodes the BWE product is limited due to the ...

    • High-speed visible-blind resonant cavity enhanced AlGaN Schottky photodiodes 

      Bıyıklı, Necmi; Kartaloglu, T.; Aytur, O.; Kimukin, I.; Özbay, Ekmel (Materials Research Society, 2003)
      We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/Al 0.2Ga 0.8N Bragg mirror. The devices ...

    • High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Gökkavas, M.; Ulu, G.; Mirin, R.; Christensen, D. H.; Ünlü, M. S.; Özbay, Ekmel (IEEE, 1998)
      Widely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity ...

    • Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures 

      Bıyıklı, Necmi; Ozgit-Akgun, Çağla; Goldenberg, Eda; Haider, Ali; Kızır, Seda; Uyar, Tamer; Bolat, Sami; Tekcan, Burak; Okyay, Ali Kemal (IEEE, 2015)
      Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of ...

    • Integrated AlGaN quadruple-band ultraviolet photodetectors 

      Gökkavas, M.; Butun, S.; Caban, P.; Strupinski, W.; Özbay, Ekmel (IOP Publishing, 2012-04-27)
      Monolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. ...

    • ITO-schottky photodiodes for high-performance detection in the UV-IR spectrum 

      Bıyıklı, Necmi; Kimukin, I.; Butun, B.; Aytür, O.; Özbay, Ekmel (IEEE, 2004)
      High-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and quarternary III-V material systems (AlGaN-GaN, AlGaAs-GaAs, ...

    • Kilometer-long ordered nanophotonic devices by preform-to-fiber fabrication 

      Bayındır, Mehmet; Abouraddy, A.F.; Shapira O.; Viens J.; Saygin-Hinczewski, D.; Sorin, F.; Arnold, J.; Joannopoulos, J. D.; Fink, Y. (Institute of Electrical and Electronics Engineers, 2006)
      A preform-to-flber approach to the fabrication of functional fiber-based devices by thermal drawing in the viscous state is presented. A macroscopic preform rod containing metallic, semiconducting, and insulating constituents ...

    • Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN 

      Bütün, S.; Gökkavas, M.; Yu, H.; Özbay, Ekmel (AIP Publishing LLC, 2006)
      Metal-semiconductor-metal photodetectors on semi-insulating GaN templates were demonstrated and compared with photodetectors fabricated on regular GaN templates. Samples were grown on a metal organic chemical vapor deposition ...

    • LSPR enhanced MSM UV photodetectors 

      Butun, S.; Cinel, N. A.; Özbay, Ekmel (IOP Publishing, 2012-10-18)
      We fabricated localized surface plasmon resonance enhanced UV photodetectors on MOCVD grown semi-insulating GaN. Plasmonic resonance in the UV region was attained using 36nm diameter Al nanoparticles. Extinction spectra ...