Browsing by Author "Liu W."
Now showing items 21-23 of 23
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Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency
Zhang Z.-H.; Liu W.; Ju, Z.; Tan S.T.; Ji Y.; Zhang X.; Wang, L.; Kyaw, Z.; Sun, X. W.; Demir, Hilmi Volkan (AIP Publishing, 2014)InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN ... -
Room-temperature larger-scale highly ordered nanorod imprints of ZnO film
Kyaw, Z.; Wang J.; Dev, K.; Tiam Tan, S.; Ju, Z.; Zhang, Z.-H.; Ji, Y.; Hasanov, N.; Liu W.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2013)Room-temperature large-scale highly ordered nanorod-patterned ZnO films directly integrated on III-nitride light-emitting diodes (LEDs) are proposed and demonstrated via low-cost modified nanoimprinting, avoiding a ... -
Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes
Kyaw, Z.; Zhang Z.-H.; Liu W.; Tan S.T.; Ju, Z. G.; Zhang, X. L.; Ji Y.; Hasanov N.; Zhu B.; Lu S.; Zhang, Y.; Teng, J. H.; Wei, S. X.; Demir, Hilmi Volkan (AIP Publishing, 2014-04-24)A three-step graded undoped-InGaN layers embedded between the GaN last quantum barrier layer and the p-AlGaN electron blocking layer was proposed and its effect on the performance of InGaN/GaN light-emitting diodes was ...