Browsing by Author "Aydınlı, Atilla"

Now showing items 21-40 of 141

    • Defect luminescence in some layered binary chalcogenide semiconductors 

      Aydınlı, Atilla; Gasanly, N. M. (Scientific.Net, 2002)
      A number of semiconductors such as GaS, GaSe, GaSSe show layered structure where intralayer bonding is strong and interlayer bonding quite weak. With bandgaps mostly in the visible and the near infrared and high crystal ...

    • Defect luminescence in undoped p-type GaSe 

      Aydınlı, Atilla; Gasanly, N. M.; Gökşen, K. (Taylor & Francis, 2001)
      Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide ...

    • Design and analysis of integrated optical sensors for scanning probe microscopies 

      Kocabas, C.; Aydınlı, Atilla (IEEE, 2005)
      In this paper, a novel probe for displacement sensing will be introduced. It is based on a conventional GaAs cantilever, integrated with a Bragg grating as a photo-elastic strain sensor. The deflection of the cantilever ...

    • Direct imaging of localized surface plasmon polaritons 

      Balcı, Sinan; Karademir, Ertuğrul; Kocabaş, Coşkun; Aydınlı, Atilla (Optical Society of America, 2011-08)
      In this Letter, we report on dark field imaging of localized surface plasmon polaritons (SPPs) in plasmonic waveguiding bands formed by plasmonic coupled cavities. We image the light scattered from SPPs in the plasmonic ...

    • Donor - acceptor pair recombination in Tl2InGaS4 layered crystals 

      Goksen, K.; Gasanly, N.M.; Ozkan H.; Aydınlı, Atilla (2005)
      Photoluminescence (PL) spectra of Tl2InGaS4 layered single crystals were studied in the temperature range 15-150 K and wide laser excitation intensity range 0.01-110.34 Wcm-2. We observed a total of three PL bands, one ...

    • Donor-acceptor pair recombination in AgIn5S8 single crystals 

      Gasanly, N. M.; Serpengüzel, A.; Aydınlı, Atilla; Gürlü, O.; Yilmaz, I. (American Institute of Physics, 1999-03-15)
      Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV at 10 K and an excitation ...

    • Donor-acceptor pair recombination in gallium sulfide 

      Aydınlı, Atilla; Gasanly, N. M.; Goksen, K. (American Institute of Physics, 2000-12-15)
      Low temperature photoluminescence of GaS single crystals shows three broad emission bands below 2.4 eV. Temperature and excitation light intensity dependencies of these bands reveal that all of them originate from close ...

    • Effect of Composition on the Spontaneous Emission Probabilities, simulated Emission Cross Sections and Local Environment of Tm+3, in Teo2-Wo3 Glass' 

      Özen, G.; Aydınlı, Atilla; Cenk, S.; Sennaroğlu, A. (Elsevier Science B.V, 2003-04)
      Effect of composition on the structure, spontaneous and stimulated emission probabilities of various 1.0 mol% Tm2O3 doped (1 - x)TeO2 + (x)WO3 glasses were investigated using Raman spectroscopy, ultraviolet-visible-near-infrared ...

    • Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Salihoglu, Ö.; Aydınlı, Atilla; Aslan, B.; Arikan, B.; Kilinc, M. C.; Ergun, Y.; Serincan, U.; Turan, R. (IEEE, 2012)
      The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ...

    • An elastomeric grating coupler 

      Kocabas, A.; Ay, F.; Dâna, A.; Aydınlı, Atilla (IOP Institute of Physics, 2006)
      We report on a novel nondestructive and reversible method for coupling free space light to planar optical waveguides. In this method, an elastomeric grating is used to produce an effective refractive index modulation on ...

    • Electric field dependence of modulation in multilayer InAs quantum dot waveguides 

      Akça, Imran B.; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li, A.; Fiore, A.; Dagli, N. (IEEE, 2007)
      The low voltage modulation in InAs quantum dot waveguides is observed in this paper. We have measured the electro-optic coefficient in multilayer quantum dot structures far away from resonance and obtained an enhancement ...

    • Electrical performance of InAs/AlSb/GaSb superlattice photodetectors 

      Tansel, T.; Hostut M.; Elagoz, S.; Kilic A.; Ergun, Y.; Aydınlı, Atilla (Academic Press, 2016)
      Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ...

    • Electro-optic and electro-absorption characterization of InAs quantum dot waveguides 

      Akça, İmran B.; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li, L.; Fiore, A.; Dağlı, N. (Optical Society of America, 2008-03)
      Abstract Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures ...

    • Electro-optic modulation of InAs quantum dot waveguides 

      Akça, İmran. B.; Dâna, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li, L.; Fiore, A.; Dağlı, N. (Technische Universiteit Eindhoven, 2008)
      The linear electro-optic properties in waveguides containing self-organized In As quantum dots were studied experimentally. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly ...

    • Electronic and optical properties of 4.2 lm‘‘N’’ structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydınlı, Atilla (Elsevier B.V., 2013-01-05)
      We report on the development of a new structure for type II superlattice photodiodes that we call the ‘‘N’’ design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The ...

    • Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydınlı, Atilla (Elsevier, 2013)
      We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ...

    • Enhancement and inhibition of photoluminescence in hydrogenated amorphous silicon nitride microcavities 

      Serpenguzel, A.; Aydınlı, Atilla; Bek, A. (Optical Society of America, 1997-09-01)
      A Fabry-Perot microcavity is used for the enhancement and inhibition of photoluminescence in hydrogenated amorphous silicon nitride. The amplitude of the photoluminescence is enhanced 4 times, while its linewidth is reduced ...

    • Excitation of a surface plasmon with an elastomeric grating 

      Kocabas, A.; Dâna, A.; Aydınlı, Atilla (American Institute of Physics, 2005)
      We report on a new method to excite surface plasmon polaritons on a thin metal slab surface using an elastomeric grating which is fabricated by replica molding technique. The grating is placed on the metal surface which ...

    • Excited-state dynamics and nonlinear optical response of Ge nanocystals embedded in silica matrix 

      Razzani, L.; Gnoli, A.; Righini, M.; Dana, A.; Aydınlı, Atilla (A I P Publishing LLC, 2006-05-01)
      We use a dedicated Z-scan setup, arranged to account for cumulative effects, to study the nonlinear optical response of Ge nanocrystals embedded in silica matrix. Samples are prepared with plasma-enchanced chemical-vapor ...

    • Experimental and theoretical investigations of electronic and atomic structure of Si-nanocrystals formed in sapphire by ion implantation 

      Wainstein, D.; Kovalev, A.; Tetelbaum, D.; Mikhailov, A.; Bulutay, Ceyhun; Aydınlı, Atilla (IOP, 2008)
      The semiconductor nanocomposites based on Si nanocrystals in dielectric matrices attract a great amount of attention due to their ability for luminescence in visible and near-IR part of the electromagnetic spectrum. Si ...