Browsing by Keywords "HEMT"
Now showing items 1-20 of 23
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A 6-18 GHz GaN power amplifier MMIC with high gain and high output power density
(IEEE, 2019)A three-stage reactively-matched 6-18 GHz power amplifier MMIC design is presented. The design effort is focused on obtaining a low-loss output matching network for a high output power density. Active unit cells consist ... -
Broadband GaN LNA MMIC development with the micro/nano process development by kink-effect in S22 consideration
(Bilkent University, 2021-01)Broadband low noise amplifiers (LNA) are one of the key components of the nu-merous applications such as communication, electronic warfare, and radar. The requirements for higher bandwidth, higher speed, higher survivability, ... -
Design, fabrication, and characterization of normally-off GaN HEMTS
(Bilkent University, 2019-07)GaN-based high-electron-mobility transistors (HEMTs) have been developing rapidly from the time when they were first demonstrated in the 1990s. They have consistently been presented as a displacement technology to silicon ... -
Effect of various pseudomorphic AIN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In0.18AI0.82N/GaN based heterostructures
(Institutul National de Cercetare-Dezvoltare pentru Optoelectronica, 2009)We explored the effects of various pseudomorphic AlN layer insertions in lattice-matched In0.18Al0.82N/GaN based heterostructures on band structures and carrier densities with the help of one-dimensional self-consistent ... -
Fabrication of ALN/GAN MIS-Hemt with SIN as gate dielectric and performance enhancement with ALD deposited alumina
(Bilkent University, 2016-10)Silicon based transistors reached a limit, especially for high power and high frequency applications due to their relatively low bandgap and breakdown voltage. With its higher bandgap and breakdown voltage, GaN based ... -
GaN based LNA MMICs for X-band applications
(Institute of Electrical and Electronics Engineers, 2020)In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been ... -
GaN HEMT based MMIC design and fabrication for Ka-band applications
(Bilkent University, 2020-07)Gallium Nitride (GaN) technology has recently dominated the high power applications in the mm-wave frequencies, and its commercial use is emerging with the upcoming 5G technology. High Electron Mobility Transistors (HEMTs) ... -
GaN-on-SiC LNA for UHF and L-Band
(IEEE, 2019)In this paper, we report a broadband GaN HEMT LNA from 100 MHz to 2 GHz, using common source with inductive degeneration and RC feedback topology. Flat gain response of ±1.5 dB variation for 9 V drain voltage with 108 mA ... -
High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology
(Cambridge University Press, 2022-06-16)In this paper, two high efficiency monolithic microwave integrated circuits (MMICs) are demonstrated using NANOTAM's in-house Ka-band fabrication technology. AlGaN/GaN HEMTs with 0.2 μm gate lengths are characterized, and ... -
A high gain and high efficiency 15 W X-Band GaN power amplifier MMIC
(IEEE, 2019)An X-band microstrip power amplifier MMIC based on our 0.25 μm AlGaN/GaN on SiC process technology is presented in this work. Fabrication steps, HEMT structure and typical device performance are demonstrated. Design procedure ... -
High-power and low-loss SPDT switch design using gate-optimized GaN on SiC HEMTs for S-band 5G T/R modules
(Bilkent University, 2022-07)Radio frequency (RF) switches are one the fundamental components of modern communication systems. They enable the routing of high-frequency signals into different transmission paths. Therefore, they play a crucial role in ... -
Investigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniques
(Institute of Electrical and Electronics Engineers Inc., 2019)A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch ... -
Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs
(IOP, 2019-07)In this paper, we report an angstrom-thick atomic layer deposited (ALD) aluminum oxide (Al2O3) dielectric passivation layer for an AlGaN/GaN high electron mobility transistor (HEMT). Our results show a 55% improvement in ... -
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance
(IEEE, 2016)In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the ... -
Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment
(Elsevier, 2019)We demonstrate the electrical performances of an AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with low gate leakage current (Ig). A low gate leakage current as low as the order of ... -
Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)
(Institutul National de Cercetare-Dezvoltare pentru Optoelectronica, 2009-05)We explored the effects of the Al-mole fraction (x) of AlxGa1-xN barrier layers and the thickness of some layers on carrier densities and electron probability densities in normally-on AlGaN-GaN double-channel high electron ... -
Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers
(ELSEVIER, 2011-02-01)The effects of the In-mole fraction (x) of an InxGa 1-xN back barrier layer and the thicknesses of different layers in pseudomorphic AlyGa1-yN/AlN/GaN/InxGa 1-xN/GaN heterostructures on band structures and carrier densities ... -
Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology
(Institute of Physics Publishing Ltd., 2021-12-10)In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching ... -
A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs
(ELSEVIER, 2008-07-14)We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron ... -
Strain calculations from hall measurements in undoped Al 0.25Ga0.75N/GaN HEMT structures
(American Institute of Physics, 2007)The transport properties of undoped Al0.25Ga0.75N/GaN HEMT structures grown by MOCVD were investigated in a temperature range of 20 K-350 K. With Quantitative Mobility Spectrum Analysis (QMSA) method; it was found that, ...
