Sayan, S.Garfunkel, E.Süzer, Şefik2016-02-082016-02-0820020003-6951http://hdl.handle.net/11693/24729Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO 2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05±0.1eV between HfO 2 (in HfO2/15ÅSiO2/Si) and SiO 2 (in 15 Å SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10ÅSiOxNy/Si and HfO 2/15ÅSiO2/Si systems. © 2002 American Institute of Physics.EnglishSoft x - ray photoelectron spectroscopySoft x - ray photoemissionValence - band maximumsValence - band offsetHafnium oxidesSiliconValence bandsX ray photoelectron spectroscopySilicon compoundsArticle10.1063/1.1450049