Kimukin, İbrahimBıyıklı, NecmiKartaloğlu, TolgaAytür, OrhanÖzbay, Ekmel2016-02-082016-02-082003-040272-9172http://hdl.handle.net/11693/27480Date of Conference: 22-24 April, 2003Conference name: 2003 MRS Spring Meeting & Exhibit Symposium C—New Applications for Wide-Bandgap SemiconductorsWe have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.EnglishBandwidthCavity resonatorsEnergy gapGallium nitrideIndium compoundsMirrorsRefractive indexSchottky barrier diodesSemiconducting aluminum compoundsThin filmsUltraviolet detectorsFast pulse responsesReflectivity measurementsResonant peaksPhotodiodesConference Paper10.1557/PROC-764-C3.22