Chen W.McCarthy, K.G.O'Brien, S.Çopuroǧlu, MehmetCai, M.Winfield, R.Mathewson, A.2016-02-082016-02-0820130040-6090http://hdl.handle.net/11693/27982This work studies the impact of annealing temperatures on PMNT (lead-magnesium niobate-lead titanate, Pb(Mg0.33Nb 0.67)0.65Ti0.35O3) thin films grown on a silicon substrate. The electrical properties of the thin films, such as dielectric constant and loss tangent, are shown to depend strongly on the annealing temperature, with the best electrical properties being achieved at the highest annealing temperature. It is seen that the perovskite phase is highest in the sample annealed at 750 C indicating that a relatively high temperature is necessary for complete transition of PMNT to the perovskite phase. The sample annealed at 400 C exhibits the lowest loss tangent of approximately 0.007 at a frequency of 1 MHz. © 2012 Elsevier B.V.EnglishLoss tangentPMNTSol-gelThin filmsAnnealing temperaturesHigh density capacitorsHigh temperatureLead magnesium niobate-lead titanatesLoss tangentPerovskite phasePMNTSilicon substratesAnnealingMagnesiumPerovskiteSol-gel processSol-gelsThin filmsElectric propertiesArticle10.1016/j.tsf.2012.12.092