Alevli, M.Gungor, N.Haider A.Kizir S.Leghari, S. A.Bıyıklı, Necmi2018-04-122018-04-122016-020734-2101http://hdl.handle.net/11693/37352Gallium nitride films were grown by hollow cathode plasma-assisted atomic layer deposition using triethylgallium and N2/H2 plasma. An optimized recipe for GaN film was developed, and the effect of substrate temperature was studied in both self-limiting growth window and thermal decomposition-limited growth region. With increased substrate temperature, film crystallinity improved, and the optical band edge decreased from 3.60 to 3.52 eV. The refractive index and reflectivity in Reststrahlen band increased with the substrate temperature. Compressive strain is observed for both samples, and the surface roughness is observed to increase with the substrate temperature. Despite these temperature dependent material properties, the chemical composition, E1(TO), phonon position, and crystalline phases present in the GaN film were relatively independent from growth temperature.EnglishAtomic layer depositionCathodesComposite structuresDecompositionDepositionElectrodesElectron sourcesFilm growthGallium nitrideRefractive indexSubstratesSurface roughnessThin filmsChemical compositionsCompressive strainCrystalline phasisDecomposition limited growthsGallium nitride filmsSelf-limiting growthsSubstrate temperatureTemperature-dependent material propertiesPulsed laser depositionArticle10.1116/1.4936230