Battal, E.Ozcan, A.Okyay, Ali Kemal2015-07-282015-07-282014-09-082195-1071http://hdl.handle.net/11693/12755Resistive switching enables optical modulation via atomic scale modifications that induce change in the refractive index of active device materials. The formation of filaments and migration of atoms around these filaments between high resistance and low resistance states results in the modulation of the free carrier concentration and, hence, the optical constants of the material.EnglishWave-guideMemoryDevicesSiliconOxideTunabilityUltrafastModelArticle10.1002/adom.201400209