Çakmak, H.Arslan, E.Rudziński, M.Demirel, P.Unalan, H. E.Strupiński, W.Turan, R.Öztürk, M.Özbay, Ekmel2016-02-082016-02-0820140957-4522http://hdl.handle.net/11693/26509This study focuses on both epitaxial growths of InxGa 1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The high resolution X-ray and Hall Effect characterization were carried out after epitaxial InGaN solar cell structures growth. The In content of the graded InGaN layer was calculated from the X-ray reciprocal space mapping measurements. Indium contents of the graded InGaN epilayers change from 8.8 to 7.1 % in Sample A, 15.7-7.1 % in Sample B, and 26.6-15.1 % in Sample C. The current voltage measurements of the solar cell devices were carried out after a standard micro fabrication procedure. Sample B exhibits better performance with a short-circuit current density of 6 mA/cm2, open-circuit voltage of 0.25 V, fill factor of 39.13 %, and the best efficiency measured under a standard solar simulator with one-sun air mass 1.5 global light sources (100 mW/cm2) at room temperature for finished devices was 0.66 %.EnglishEpilayersGallium alloysIndiumLight sourcesMetallorganic chemical vapor depositionOpen circuit voltageSapphireBetter performanceCurrent voltage measurementRoom temperatureSapphire substratesSolar cell devicesSolar cell structuresSolar simulatorX-ray reciprocal space mappingSolar cellsArticle10.1007/s10854-014-2070-4