Gökkavas, M.Bütün, S.Yu, H.Tut, T.Bütün, B.Özbay, Ekmel2016-02-082016-02-0820060003-6951http://hdl.handle.net/11693/23694Backilluminated ultraviolet metal-semiconductor-metal photodetectors with different spectral responsivity bands were demonstrated on a single Alx Ga1-x N heterostructure. This was accomplished by the incorporation of an epitaxial filter layer and the recess etching of the surface. The 11 nm full width at half maximum (FWHM) responsivity peak of the detector that was fabricated on the as-grown surface was 0.12 AW at 310 nm with 10 V bias, whereas the 22 nm FWHM responsivity peak of the detector fabricated on the recess-etched surface was 0.1 AW at 254 nm with 25 V bias. Both detectors exhibited excellent dark current characteristics with less than 10 fA leakage current. © 2006 American Institute of Physics.EnglishBias voltageEpitaxial filter layersFull width at half maximum (FWHM)Spectral responsivity bandsEtchingHeterojunctionsIlluminating engineeringLeakage currentsSemiconducting aluminum compoundsUltraviolet detectorsPhotodetectorsArticle10.1063/1.23582061077-3118