Tanatar, BilalConstantinou, N. C.2016-02-082016-02-0819940953-8984http://hdl.handle.net/11693/25954We study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field at low temperatures. We consider the mobility limits for remote-impurity scattering, homogeneous-background scattering, interface-roughness scattering, and alloy-disorder scattering mechanisms. For a system in which all carriers are in the lowest subband, the electron-impurity interaction is modelled for the above cases, and analytic expressions are derived. Calculations appropriate for a GaAs Q1D structure are presented for typical wire radius R, electron density N, impurity density Ni, and applied magnetic field B.EnglishAlloy disorder scatteringAxial magnetic fieldElectron impurity interactionHomogeneous background scatteringInterface roughness scatteringRemote impurity scatteringAnisotropyCharge carriersCrystal impuritiesElectron energy levelsElectron scatteringLow temperature effectsMagnetic field effectsMathematical modelsSemiconducting gallium arsenideElectron transport propertiesArticle10.1088/0953-8984/6/27/020